Allicdata Part #: | DTB113EKT146TR-ND |
Manufacturer Part#: |
DTB113EKT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTB113EKT146 Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 1 kOhms |
Base Part Number: | DTB113 |
Supplier Device Package: | SMT3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTB113EKT146 is a Pre-Biased Small Signal Bipolar Transistor (BJT) from the industry leaders NEC. This device is a small-signal, plastic-encapsulated, three-lead NPN transistor with a low saturation voltage and a high gain. The device provides excellent performance in a wide range of applications, from audio mixing/amplification to switching and basic switching; it is also suitable for boosting sensory signals. The device can provide stable current gain, low saturation voltage, and high frequency performance, making it an ideal choice for various applications.
In terms of application field, the device is primarily used in amplifying and switching signals in various applications such as audio mixing, boosting sensory signals, and basic switching. It is also used in applications where low saturation voltage, high gain, and stable current gain are needed. For example, the device is used in signal modulation, signal rectification, and low-level control applications.
The device has a number of features that make it an ideal choice for various signal processing applications. The device features a high gain of hfe > 180, a low saturation voltage Vce(sat) of 0.3V, and a high frequency performance of fT = 40MHz - 100MHz. These features make it ideal for small-signal or signal processing applications. For example, it can be used for audio mixing applications for improved signal-to-noise ratio. It can also be used for signal modulation or signal rectification, where its stability and low saturation voltage make it a good choice.
In terms of working principle, the DTB113EKT146 is an NPN transistor. It is designed to control the flow of current between its Collector and its Emitter. This is achieved by the voltage at the Base, which is used to control the flow of current. The device works in such a way that when it is turned off, no current flows through it. However, when it is turned on, the current starts to flow through the device. Since the device is pre-biased, it works optimally with a higher voltage applied to its Base.
In summary, the DTB113EKT146 is a single, pre-biased small signal bipolar transistor (BJT) from NEC. It is used primarily for amplifying and switching signals in various applications, and its high gain, low saturation voltage, and high frequency performance make it ideal for these types of applications. The device is designed to control the flow of current between its Collector and its Emitter, and its pre-bias conditioning means that it works best with a higher voltage applied to its Base.
The specific data is subject to PDF, and the above content is for reference
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