Allicdata Part #: | DTB114TKT146-ND |
Manufacturer Part#: |
DTB114TKT146 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTB114TKT146 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.08896 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTB114 |
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A DTB114TKT146 is a single pre-biased bipolar junction transistor (BJT). This particular BJT is a term used to describe a type of transistor that uses both electrons and holes to carry current across a junction. It is designed to be used in applications where the traditional bipolar transistor cannot adequately function due to its limited current carrying capacity.
The DTB114TKT146 is designed to provide a high level of reliability, current handling, and a wide range of operation voltage, to suit a variety of applications. It has a high gain, low noise, and can be used in both linear and switched modes of operation.
The working principle of the DTB114TKT146 hinges on a few key components. First is the base, which is the location for the holes and electrons to interact. Second is the emitter, which is the primary source of current. Finally, the collector is the destination for the electrons being released from the base.
When a voltage is applied to the base of the DTB114TKT146, it allows for electrons to flow from the emitter to the collector, thus creating a flow of current. As the current flow increases, an upward bias voltage is applied to the emitter, which in turn increases the amount of current flowing. This phenomenon is known as the “Early Effect”.
In addition to the Early Effect, the DTB114TKT146 also utilizes a band gap voltage to further regulate the current flow. This voltage helps to properly adjust the current flow by limiting the amount of base current, ultimately resulting in improved performance.
The DTB114TKT146 can be used in a variety of applications, including audio, video, and RF circuits. Its low noise, high gain, and low power consumption make it an ideal choice for such applications. Its wide range of operation voltage makes it suitable for use in a range of systems from low to high voltage.
The DTB114TKT146 is a single pre-biased BJT, designed to provide reliability and performance in a variety of applications. Its working principle relies primarily on the Early Effect, in conjunction with a band gap voltage, to properly regulate the current flow. It is an ideal choice for audio, video, and RF circuits, thanks to its low noise, high gain, and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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