DTB143TKT146 Discrete Semiconductor Products |
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Allicdata Part #: | DTB143TKT146TR-ND |
Manufacturer Part#: |
DTB143TKT146 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTB143TKT146 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07094 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTB143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTB143TKT146 is a PNP single pre-biased transistor manufactured by STMicroelectronics. This transistor is housed in the TO-92 package, which is one of the most popular transistor packages available. It also features a high breakdown voltage with low leakage currents. The DTB143TKT146 is a general purpose transistor that can be used in a wide variety of applications. This makes it a popular choice for various circuits, from low-power switching to high-voltage amplifiers.
A bipolar junction transistor (BJT) is made up of three layers of semiconductor material. The outer layers are known as the emitter and the collector, while the inner layer – or the base – acts as a control point. The base-emitter junction of a BJT is a diode, and so current can only flow from the emitter to the collector when it is switched on. The DTB143TKT146 is a PNP transistor, meaning the emitter-base junction is reverse-biased. This allows the current to flow in the reverse direction, from the collector to the emitter, when the transistor is switched on.
The DTB143TKT146 has a maximum collector-emitter voltage of 150V and a maximum collector current of 1A. It also has a high collector current gain (h fe ) of 140. This makes it suitable for use in high-voltage circuits, where it can act as a voltage amplifier or as a switch between two components. It can also be used in low-power switching circuits, where it can be used to control the current flow to a LED, for example. The DTB143TKT146 also has a wide operation temperature range, from -55°C to 200°C, which makes it suitable for use in a variety of applications.
The working principle of the DTB143TKT146 is based on the switching action of the transistor. When a small voltage is applied to the base of the transistor, it acts as an insulator, preventing current from flowing between the emitter and the collector. However, when a larger voltage is applied, the transistor switches on, allowing current to flow from the emitter to the collector. This current flow can be varied by changing the amount of base current supplied to the transistor, allowing it to be used as an amplifier or a switch.
The DTB143TKT146 is a versatile transistor that can be used in a variety of applications. It is a popular choice for high-voltage circuits, such as amplifiers, and low-power switching circuits. It also has a wide operating temperature range, making it suitable for use in challenging environments. With its wide variety of features, the DTB143TKT146 is a great choice for most applications.
The specific data is subject to PDF, and the above content is for reference
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