DTB123ECHZGT116 Allicdata Electronics
Allicdata Part #:

DTB123ECHZGT116TR-ND

Manufacturer Part#:

DTB123ECHZGT116

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: -500MA/-50V DIGITAL TRANSISTOR (
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTB123ECHZGT116 datasheetDTB123ECHZGT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02587
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max): 500mA
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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The single pre-biased DTB123ECHZGT116 transistor is a type of bipolar junction transistor (BJT). The BJT is a semiconductor device used in a wide range of electronic circuits, specifically in amplification, switching, and voltage regulation applications. Other types of transistors, such as field effect transistors (FETs) are also commonly used. The DTB123ECHZGT116 is a single transistor device; it has three terminals (collector, base, and emitter), with the base terminal responsible for controlling the current between the other two terminals.

The DTB123ECHZGT116 is a pre-biased transistor, which means that the base-emitter junction has a voltage applied even when no signals are input to it. This allows the transistor to operate in its active region (where it amplifies signals) without the need to start from near the transistor\'s cut-off voltage. This is what gives the DTB123ECHZGT116 its enhanced performance characteristics, making it especially suited for high-frequency circuits that require a fast response time.

The DTB123ECHZGT116 has an impressive set of electrical characteristics. It has a DC current gain (hFE) of at least 125 and a collector-emitter saturation voltage of 1.3 volts. Additionally, it has an excellent high-frequency response, with a transition frequency (fT) of up to 116 GHz. With these characteristics, it can be used in a wide range of electronic applications, including antennas, amplifiers, analog circuits, and power supplies.

The working principle of the DTB123ECHZGT116 is similar to any other BJT. The base terminal is used to control the amount of current flowing from the collector to the emitter. When the base-emitter voltage is increased, the current flow between the collector and the emitter increases. Likewise, when the voltage is reduced, the current flow decreases. This allows the DTB123ECHZGT116 to act as either an amplifier or a switch, depending on the type of signal being sent through it.

The DTB123ECHZGT116 is a versatile transistor, with a wide range of possible applications. As an amplifier, the DTB123ECHZGT116 can be used in a variety of audio, video, and RF applications. In addition, it can be used as a switch, allowing it to turn circuits on and off at high frequencies. The device is also well-suited for linear voltage regulation applications and is often used as a power supply controller.

The DTB123ECHZGT116 is a highly desirable device for many electronic applications. Its pre-biased design ensures a fast response time and its excellent electrical characteristics make it the perfect choice for high-performance applications. With its versatile range of applications, it is no wonder that the DTB123ECHZGT116 is one of the most popular transistors available on the market today.

The specific data is subject to PDF, and the above content is for reference

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