DTB143ECHZGT116

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DTB143ECHZGT116 Application Field and Working Principle

The DTB143ECHZGT116 is a pre-biased single bipolar junction transistor (BJT) from the OptiMOS™ 5 family of products from Infineon Technologies AG. It is a N-channel MOSFET developed for automotive and commercial applications, with a breakdown voltage (BV_DSS) of 40 V, a maximum current rating of 40 A, and a maximum power dissipation of 120 W. The device has a low operating gate charge of 120 nC, a switching time of 7 ns, and a low on-state resistance of 1.2 m².

The device is part of Infineon’s OptiMOS 5 family of products, which are designed specifically for power conversion applications, such as DC-DC converters and power supply circuits. The OptiMOS 5 family offers ultra-low R_DS(on) at higher currents and improved switching performance. This allows for higher efficiency in power systems and the ability to operate at higher frequencies.

The DTB143ECHZGT116 is a pre-biased MOSFET, meaning it has been preset with a base-gate voltage, or “bias” to make it operational. This bias voltage allows for easier gate control and faster switching times, allowing for improved efficiency in power conversion applications. The device is easy to use and requires no additional bias components such as resistors or capacitors.

The working principle of the DTB143ECHZGT116 is based on the conduction of electrons through the device. When a voltage is applied to the gate-source of the MOSFET, it creates an electrostatic field, called the “channel”, that attracts electrons and allows them to flow through the channel. This current flow is controlled by the applied voltage. When the source-drain voltage is greater than the gate-source voltage, then the device will be in “on” state, allowing current to flow through the device. When the voltage difference between the gate and source is reversed, the device is switched “off” and no current flows. The size and shape of the electrostatic field, or channel, affects the characteristics of the device, such as its maximum voltage and current ratings, total power dissipation, and switching time.

In summary, the DTB143ECHZGT116 is a pre-biased N-channel MOSFET designed for use in automotive and commercial power conversion applications. Its low gate charge and high maximum current rating make it ideal for DC-DC converters, while its low on-state resistance and fast switching time allow for higher efficiency and increased switching frequency. The device is easy to use, requiring no additional bias components, and is part of Infineon’s OptiMOS 5 family of products, designed specifically for power conversion.

The specific data is subject to PDF, and the above content is for reference