
Allicdata Part #: | EGF1A-E3/5CA-ND |
Manufacturer Part#: |
EGF1A-E3/5CA |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 1A DO214BA |
More Detail: | Diode Standard 50V 1A Surface Mount DO-214BA (GF1) |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.13592 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | EGF1A |
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EGF1A-E3/5CA In forward operation, the EGF1A-E3/5CA is an electronically controllable switching circuitry enabling the selective conduction of electrical power in a single direction. The primary use is in power supplies, electronic architectures, load stabilizers, anti-surge protection, and other applications requiring power-conditioning circuitry.
The EGF1A-E3/5CA has a low forward voltage drop and high peak repetitive reverse voltage. This type of diode rectifier has a reverse recovery time of approximately 5 nanoseconds and is available in various case styles and current ratings depending on the application and specifications.
As with all electronic components, the working performance of the EGF1A-E3/5CA is highly dependent on the circuit board design. The typical nominal operating temperature range is from -40°C to +90°C, making the EGF1A-E3/5CA an ideal choice for equipment used in extreme environmental conditions. With careful system design, the junction temperature of the EGF1A-E3/5CA can be kept below 150°C.
Application fields of EGF1A-E3/5CA include:
- Power supplies
- Battery chargers
- Automotive electronics
- DC-DC converters
- DC circuits
- Power electronics converters
- Servo systems
The EGF1A-E3/5CA is a three-terminal device consisting of an anode defect, a cathode gate and a gate terminal. It achieves fast, efficient, and reliable switching of an external circuit by controlling the switching action of the defect. The nominal bleed current at the cathode is 1.5mA and the switching action is initiated by a positive gate control voltage. When the gate voltage is increased to a greater than the transition voltage, the diode begins conducting current and remains in the ON state until the gate voltage is reduced below the switching threshold.
In the OFF state the cathode terminal will be the source of ananoampere of leakage current and once a gate voltage exceeding the transition voltage is applied the diode switches to the ON state. It is in this ON state that the diode can effectively direct the electrical power to the external circuit in one direction only.
The EGF1A-E3/5CA can be used in a variety of power-handling applications such as motor controllers, inverters, starters, automotive systems, and any system requiring efficient isolation from external sources. The EGF1A-E3/5CA is available in a variety of packages, making it suitable for use in a variety of applications.
The EGF1A-E3/5CA offers flexibility in the design of power supplies and other related equipment, as well as offering a high level of safety and reliability. Its flexibility and robustness have made it the preferred choice of designers in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EGF1T-E3/5CA | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1CHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1AHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1AHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
EGF1BHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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