
Allicdata Part #: | EGF1B-E3/5CAGITR-ND |
Manufacturer Part#: |
EGF1B-E3/5CA |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214BA |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214BA (GF1... |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.13592 |
13000 +: | $ 0.12654 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | EGF1B |
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Diodes are the core of many types of electronics and are used every day in a variety of applications. Rectifiers, or diodes specifically designed to convert an alternating current (ac) signal into a direct current (dc) signal, are commonly used for rectifying AC power or voltage. The EGF1B-E3/5CA rectifier is an ultra-fast silicon single rectifier, designed for high-frequency AC applications up to 2000V.
Most single rectifiers are constructed using two different junctions, the anode and the cathode. The anode is the negative part of the diode, usually labeled as the “N” on the rectifier package, while the cathode is the positive part, labeled as the “P.” The P-type junction, also known as the “reverse breakdown” region, is designed to withstand a higher reverse voltage without failing forward and is less susceptible to heat damage. The N-type junction, or the “forward blocking” region, is the part of the rectifier that blocks the flow of current in either direction.
When the polarity of the voltage applied to the diode switches from positive to negative, the P-type junction is “broken down” and the current flows in the opposite direction. This is known as “rectification” and the device is then known as a rectifier. When a load is connected to the diode, the rectifier converts the alternating current into a direct current. As the current passes through the rectifier, it will be exposed to a high voltage, which can be of great importance in various applications.
The EGF1B-E3/5CA rectifier has several features that make it suitable for a variety of applications. It is designed to remain stable at high reverse voltages up to 2000V, making it an excellent choice for use in power conversion and control systems. It is also designed to operate in a wide range of temperatures, extending its operating life and reducing the need for maintenance. Furthermore, the diode is designed with an ultra-low on/off anode-cathode capacitance that allows for maximum efficiency and high-frequency operation.
The EGF1B-E3/5CA can be used in a variety of applications where a reliable AC-to-DC conversion is required. These include DC supplies, surge protectors, and power inverters. It can also be used as a protection diode in AC-powered systems, providing protection against overvoltages and potential short circuits. Its high power rating makes it suitable for high-power systems, such as switching power supplies, motor drives, and AC/DC adapters.
The EGF1B-E3/5CA single rectifier is designed to offer superior performance and reliability in a wide range of applications. Its superior design and construction make it an ideal choice for applications that require precise AC-to-DC conversion, while its high reverse voltage rating makes it an excellent choice for use in high-power systems. Furthermore, its low on/off anode-cathode capacitance and wide temperature range make it a reliable and cost-effective solution for a wide variety of applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
EGF1T-E3/5CA | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1CHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1AHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1AHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
EGF1BHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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