| Allicdata Part #: | EGF1THE3/67AGITR-ND |
| Manufacturer Part#: |
EGF1THE3/67A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 1.3KV 1A DO214BA |
| More Detail: | Diode Standard 1300V 1A Surface Mount DO-214BA (GF... |
| DataSheet: |  EGF1THE3/67A Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | SUPERECTIFIER® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1300V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 3V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 75ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 1300V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214BA |
| Supplier Device Package: | DO-214BA (GF1) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | EGF1T |
Description
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EGF1THE3/67A Diodes - Rectifiers - Single
The EGF1THE3/67A is a power diode rectifier designed for higher power applications. It is used for the purpose of converting AC supply to DC supply. It is designed for the use in telecommunication systems, computer control systems and many industrial applications. The device is a single phase module with a single junction-diode cell and a bipolar junction diode.
The EGF1THE3/67A uses a metal-oxide semiconductor high-voltage switch that controls the on and off states of the device. The metal-oxide semiconductor is electrically isolated from the diode cell by a metal oxide layer and works by applying a charge on the oxide layer to modulate the current and voltage. This device can be used in AC or DC power supply applications.
The EGF1THE3/67A uses a single junction-diode cell for high voltage control. The junction-diode is constructed with two diodes in series, with the first diode being the anode and the second diode being the cathode. The anode is connected to the gate of the metal-oxide semiconductor high-voltage switch and the cathode is connected to the load. The diode cell is connected in series between the load and the gate.
The EGF1THE3/67A also utilizes a bipolar junction diode (BJT) structure. A BJT device is a semiconductor device, made up of three regions: the emitter, collector and base. The base is connected to the gate, the collector is connected to the load and the emitter is connected to the source of current. The BJT allows for better control of the current and voltage through the diode cell.
The EGF1THE3/67A device includes protection features to protect it from voltage and current surges. Voltage protection includes a reverse bias clamping circuit, which reduces the voltage across the junction when the voltage exceeds a certain threshold. It also includes a clamp circuit to reduce over-voltage across the junction. Current protection includes a current limiting resistor and a current monitoring/control circuit.
The EGF1THE3/67A is capable of handling large current and peak voltages up to 600V. It is also capable of operating in temperatures up to 75 degrees Celsius. The device is designed with low on-resistance and high surge current capability, which allows the device to operate efficiently under high current conditions. The device is designed for long life, and is RoHS compliant.
The applications of EGF1THE3/67A include high power rectification and reverse voltage blocking in high-power AC and DC circuits. The device is used for the purpose of converting AC supply to DC supply in telecommunication systems, computer control systems and other industrial applications. It can also be used as a power switch in applications such as portable medical instruments and automotive systems.
In summary, the EGF1THE3/67A is a high power diode rectifier designed for higher power applications such as telecommunication systems, computer control systems and other industrial applications. The device includes a single junction-diode cell and a bipolar junction diode and utilizes a metal-oxide semiconductor switch for high voltage control. It also includes protection features to protect against voltage and current surges. The device is capable of handling high current and peak voltages up to 600V, and is RoHS compliant.
The specific data is subject to PDF, and the above content is for reference
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| EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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| EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
| EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
| EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
| EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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| EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
| EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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