
Allicdata Part #: | EGF1DHE3_A/I-ND |
Manufacturer Part#: |
EGF1DHE3_A/I |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214BA |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214BA (GF1... |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.13428 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 2µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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EGF1DHE3_A/I Application Field and Working Principle
EGF1DHE3_A/I is a rectifier diode, a kind of device which enables a current to move in one direction. It is used in a variety of applications such as voltage regulation, motor speed control, and load balancing.
The EGF1DHE3_A/I rectifier diode\'s basic function is to allow a current to move in one direction, and block the flow of current in the opposite direction. It consists of a N-type semiconductor connected to positive terminals of the device, and a P-type material connected to the negative terminal of the device. When a voltage is applied to the N-type material, it form a sort of barrier that only allows current to flow in the direction of the external voltage, thereby preventing current flow in the opposite direction.
Since the EGF1DHE3_A/I rectifier diode is a unidirectional device, it is commonly used in applications where it is necessary to either regulate or block voltage in one direction. These types of applications include power supplies, DC to DC converters, voltage multipliers and lighting ballasts. The EGF1DHE3_A/I rectifier diode is also used in a variety of motor speed control applications, such as pressure and temperature controllers, and actuators.
The working principle of the EGF1DHE3_A/I rectifier diode can be broken down into three different voltage states, dependent on the polarity of the voltage applied to it. When the voltage is positive, the P-type region of the device provides a path for current flow, leading to a forward current flow in the diode, and a low voltage drop. When the voltage is negative, the P-type region of the device does not provide a path for current flow, leading to a reverse current flow with a much higher voltage drop. In this case the diode is said to be in a reverse-biased condition. Finally, when there is no voltage applied to the diode, it is in an off state, referred to as the zero-bias state.
The EGF1DHE3_A/I rectifier diode is an extremely versatile device that is used in a wide variety of applications. It is relatively easy to design and integrate into a system due to its low power consumption and high efficiency. Additionally, the device can be used to switch off and regulate the flow of current in both AC and DC circuits.
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EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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