EGF1AHE3_A/H

Series:	Automotive, AEC-Q101, Superectifier®
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	5µA @ 50V
Capacitance @ Vr, F:	15pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214BA
Supplier Device Package:	DO-214BA (GF1)
Operating Temperature - Junction:	-65°C ~ 175°C

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Introduction

EGF1AHE3_A/H is a single rectifier diode designed and manufactured by Epcos. It is designed to provide excellent average performance in a wide range of applications in power, industrial and consumer electronic applications. The diode technology used in the manufacture of EGF1AHE3_A/H ensures outstanding performance in terms of power dissipation and low leakage current. In addition, the diode has high thermal and electrical stability, excellent surge endurance and robust construction.

Application Field

EGF1AHE3_A/H is mainly used in a variety of switching applications in power and industrial electronics as well as for consumer electronics. It can be used for high-voltage switching and rectification functions, such as in a dc-to-DC converter, motor controller, HVDC converter and ACR circuits. It is also used in power factor correction, voltage regulator modules and solar cell systems. Other applications where EGF1AHE3_A/H can be used include: switching thyristors, LED lighting, communication systems and laser diodes. It is ideal for use in industrial and consumer electronic applications due to its low leakage current, high temperature and electrical stability, surge endurance and excellent thermal performance.

Working Principle

The EGF1AHE3_A/H operates on the principle of a controllable electric current, where one or more electrical sources are passed through it. The current is regulated by a pair of electrodes, which allow the current to flow in the direction and at the rate the user desires.It is made up of a series of alternating n-type and p-type semiconductor layers, sandwiched together to form a highly conductive path for the flow of current. The voltage across the diode can be adjusted to a specific level, based on the choice of the appropriate electrodes and their relative distance from each other.The diode acts as a one-way valve for current, meaning that in the forward bias (or anode), the current will flow in the direction of the arrow marked on the diode symbol, while in the reverse bias mode, the current will not flow. The diode behaves as a rectifier, converting alternating current (AC) into direct current (DC). In addition to the three basic functions of conduction, rectification and blocking, EGF1AHE3_A/H is designed to provide voltage and power surge protection to prevent overloading of the system. The diode is designed to handle highest energy levels, ensuring reliable fault-free operation in the most demanding industrial power systems.

Conclusion

EGF1AHE3_A/H is an excellent single rectifier diode for a range of applications in power, industrial and consumer electronic applications. It offers high thermal and electrical stability, excellent surge endurance and robust construction, along with excellent power dissipation and low leakage current. Its versatile design enables it to be used for a variety of applications, ranging from power factor correction, to voltage regulation modules and converters. With its ability to handle high energy levels and provide voltage and power surge protection, EGF1AHE3_A/H is an ideal choice for many demanding industrial power systems.

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