
Allicdata Part #: | EGF1D-2HE3/67A-ND |
Manufacturer Part#: |
EGF1D-2HE3/67A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214BA |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214BA (GF1... |
DataSheet: | ![]() |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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EGF1D-2HE3/67A is a component of the diodes rectifiers single family. It is a controlled avalanche rectifier with a very low forward voltage drop of 1.25V and an operating temperature range of between -55°C to 125°C. The component is specially designed to be used in power supplies and voltage regulation systems. It can be used in various circuits, including DC/DC converters, frequency converters, invertors and other circuit configurations that require a high reverse voltage blocking capability and low VF, such as flyback converters, high voltage D.C. to AC converters, etc.
The EGF1D-2HE3/67A is precision engineered to meet the stringent requirements of electronic switches and rectifiers, including rapid switching speeds and low loss performance. Its rare and optimized design features can handle high current up to 8A and allows for a very small package size to be installed in extremely high voltage applications. Its ultra-low forward voltage drop of 1.25V allows for higher efficiency power transmission even in extreme environments. The component also has an integrated Substrateref= that offers superior protection against unwanted transient voltages.
The working principle of the EGF1D-2HE3/67A is simple and efficient. It is a controlled avalanche rectifier that allows a very low forward voltage drop and high surge capability. This feature makes it particularly attractive for applications such as high power switching, high power regulation and invertors. When the device is OFF, no current passes through it but as soon as the voltage across the anode and cathode reaches the breakdown voltage (also known as avalanche voltage), a controlled avalanche ensues and current flows positively through the component. This avalanche process is a self-sustaining process and the current flow through the component is controlled by the breakdown voltage of the component. The EGF1D-2HE3/67A is ideal for applications requiring a low forward voltage drop and high surge capability, such as DC-DC converters and switching power supplies.
The EGF1D-2HE3/67A is perfect for applications such as high power regulation and controlling, including DC/DC converters, frequency converters and invertors. It’s low forward voltage drop and high avalanche energy make it perfect for extreme environments. Its small size and highly integrated features mean it can be installed in very small packages. It is widely used in various power applications and its precision engineered design allows for reliable and efficient operation in these applications.
In conclusion, the EGF1D-2HE3/67A is a precision engineered controlled avalanche rectifier with a very low forward voltage drop of 1.25V and an operating temperature range of between -55°C to 125°C. Its optimized design features make it perfect for high power regulation and control applications, while its small size and integrated protection ensures reliable performance in extreme conditions. Its low forward voltage drop and high avalanche energy allow for efficient and reliable operation in a variety of power applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
EGF1T-E3/5CA | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1CHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1AHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1AHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
EGF1BHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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