EGF1AHE3_A/I Allicdata Electronics
Allicdata Part #:

EGF1AHE3_A/I-ND

Manufacturer Part#:

EGF1AHE3_A/I

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 50V 1A DO214BA
More Detail: Diode Standard 50V 1A Surface Mount DO-214BA (GF1)
DataSheet: EGF1AHE3_A/I datasheetEGF1AHE3_A/I Datasheet/PDF
Quantity: 1000
6500 +: $ 0.13428
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: Automotive, AEC-Q101, Superectifier®
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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A diode is a semiconductor device consisting of two terminals. It only allows current to flow in the forward direction and blocks current in the reverse direction. The EGF1AHE3_A/I is a single-phase silicon rectifier diodes with a high forward surge current capability. It is widely used in electronic products such as voltage regulators, power supplies, frequency converters, motor drives, and even solar cells.

The working principle of the EGF1AHE3_A/I is based on the PN junction diode. This diode has a P-type semiconductor layer which has a surplus of holes and an N-type semiconductor layer with a surplus of electrons. When a forward voltage is applied to the diode, the holes in the P-type layer are filled with electrons from the N-type layer, creating an junction region that allows current to flow freely. However, when a reverse voltage is applied, the electrons in the N-type layer are attracted to the holes in the P-type layer, creating a barrier that blocks current.

The EGF1AHE3_A/I is designed to have a high forward surge current capability and a low forward voltage drop. It is capable of operating at high temperatures up to 150°C and is suitable for use in high-power applications, such as motor drives, DC-DC converters, power supplies, etc. It also has an internal avalanche clamp for protection against high-voltage transients.

In addition, the EGF1AHE3_A/I is UL recognized and RoHS compliant, making it a reliable, cost effective solution for a variety of electronic applications. It is available in different package sizes, from the small SOD-123 size to the larger TO-220 and TO-247 packages. This makes it suitable for use in a wide range of applications, from simple dc motor applications to high-power motor drives.

In conclusion, the EGF1AHE3_A/I is a single-phase silicon rectifier diode with a high forward surge current capability and a low forward voltage drop. It is designed to operate at high temperatures up to 150°C and is suitable for use in high-power applications. It is UL recognized, RoHS compliant, and available in a wide range of package sizes, making it a reliable and cost effective solution for a variety of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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