
Allicdata Part #: | EGF1BHE3/67A-ND |
Manufacturer Part#: |
EGF1BHE3/67A |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214BA |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214BA (GF1... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.13396 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | EGF1B |
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EGF1BHE3/67A is a single diode rectifier device, primarily utilized for the purpose of transforming AC electrical power into DC electrical power. This device is not recommended for continuously biased applications because it is not made for that purpose. The primary benefit of using this type of rectifier device is the high efficiency and fast switching speed. In addition, it is also cost-effective compared to other rectifier devices.
The EGF1BHE3/67A is a fast, ultra-high efficiency single diode rectifier device, offering up to 98% efficiency in automotive applications. This device has an operating range of between 0-90V AC power and also supplied with a 15A load current, offering a typical rectification efficiency of 98%. It is a HERM Single Junction rectifier, which use a single doped semiconductor junction to achieve rectification and achieve fast switching speed. This rectifier is designed for differential AC to DC converting and reverse power flow protection applications.
The main operating principle behind EGF1BHE3/67A is the forward-biased diode bridge rectifier. If the diode is forward biased, it is ready to conduct current. After the diode is turned on, the current immediately drops down and the remaining voltage across the diode is the voltage drop across the diode, which is the forward voltage drop. By using this principle, the device is then able to transform AC power into direct current through rectification.
EGF1BHE3/67A has a capability for reverse current blocking which is made possible by the presence of the detection points inside the device which can detect and block any reverse current from passing through. This is an essential feature of circular diode rectifiers because it ensures that the device remains in the "on" position and does not turn off. In addition, the maximum reverse leakage current is listed as low as 0.05A.
EGF1BHE3/67A is able to offer fast switching speeds due to its low on-state resistance, which is typified as 2.2Ω. This device is able to offer a charging time of 2.5 µs while the discharge time is maintained at 2.3 µs. The diode has a maximum junction temperature of 175° Celsius (C) or 230°C (Max).
EGF1BHE3/67A has a wide range of applications and these include solar plants, rectification in switch-mode power supplies and various other DC/DC applications. This device can be used in automotive, industrial and other applications requiring high power density operation.
In conclusion, EGF1BHE3/67A is a single diode rectifier device that is designed for AC to DC power conversion, reverse power flow protection and other applications requiring high power density operation. This device is characterized by its high efficiency, fast switching speed, low on-state resistance, reverse current blocking and low reverse leakage current. It is also cost-effective and provides excellent performance for automotive, industrial and other applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
EGF1T-E3/5CA | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1CHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1AHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1AHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
EGF1BHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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