
Allicdata Part #: | EGF1C-E3/5CA-ND |
Manufacturer Part#: |
EGF1C-E3/5CA |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 1A DO214BA |
More Detail: | Diode Standard 150V 1A Surface Mount DO-214BA (GF1... |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.13592 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 150V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214BA |
Supplier Device Package: | DO-214BA (GF1) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | EGF1C |
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EGF1C-E3/5CA application field and working principle
The EGF1C-E3/5CA is a type of single rectifier diode with different applications and associated working principles. The device is of the Schottky Barrier Rectifier type, and its main properties are the low required forward voltage for conduction, as well as its capability of conducting at high current densities. This type of diode is constructed with a metal-semiconductor junction, and it can be used for applications such as voltage regulation, rectification, waveform conversion, and more.
When using the EGF1C-E3/5CA, a minimum current is required for the diode to be activated, but once the current is provided, the device will begin to conduct. The voltage drop across the diode is known as the forward voltage and is usually around 0.45V. The current that the device can safely conduct is known as the threshold current and this is dependant upon the device itself. Its capability of conducting at high current densities makes it suitable for high speed switching and short-duration energy applications.
The EGF1C-E3/5CA is commonly used in the electronics industry for many applications, ranging from protection and voltage regulation to waveform conversion and rectification. Its low forward voltage and high current density make it suitable for many applications, making it a highly sought-after diode. In applications such as power supplies, the EGF1C-E3/5CA can be used as a voltage regulator, as it has the ability to control the voltage across a load. In these cases, the diode can be used for positive and negative voltage regulation, as it has a low forward voltage drop and is able to conduct current at high densities. The diode can also be used for waveform conversion, as it has a wide range of frequencies that can be used for this purpose.
In applications where safety is a factor, the EGF1C-E3/5CA can be used for overvoltage protection. This is achieved by the diode having a threshold current value; when the current reaches a certain level, the diode begins to conduct and it is able to safely dissipate the excess current. This helps to protect sensitive electronic components from damage, as well as helping to prevent electrical fires.
The EGF1C-E3/5CA is also capable of rectification, meaning that it can convert alternating current (AC) to direct current (DC). In rectification applications, the device acts as a one-way gate, allowing current to pass in one direction and blocking it in the other. This is achieved when the forward voltage drop across the device is lower than the voltage of the AC source. These types of devices can also be used for peak-clipping and current regulation, as they can be used to reduce the peak voltage of an AC signal and regulate its current.
In summary, the EGF1C-E3/5CA is a type of single rectifier diode with different applications and associated working principles. It has a low required forward voltage for conduction and is capable of conducting at high current densities, making it suitable for many applications. The device is commonly used in the electronics industry for protection, voltage regulation, waveform conversion, and rectification. It is also capable of overvoltage protection, peak-clipping, and current regulation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EGF1T-E3/5CA | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1CHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1AHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1AHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A SM... |
EGF1BHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-2HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1AHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1BHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1T-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1THE3/5CA | Vishay Semic... | 0.15 $ | 6500 | DIODE GEN PURP 1.3KV 1A D... |
EGF1B-1HE3/5CA | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1DHE3_A/I | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1A | ON Semicondu... | 0.1 $ | 1000 | DIODE GEN PURP 50V 1A SMA... |
EGF1DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1CHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1CHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1BHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1D-E3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1BHE3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1C | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 1A SM... |
EGF1A-E3/67A | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1DHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1A-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1THE3/67A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 1A D... |
EGF1C-E3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1C-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B-1HE3/67A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGF1AHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGF1CHE3/67A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGF1B | ON Semicondu... | 0.1 $ | 7500 | DIODE GEN PURP 100V 1A SM... |
EGF1D-E3/5CA | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGF1B-E3/67A | Vishay Semic... | 0.18 $ | 4500 | DIODE GEN PURP 100V 1A DO... |
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