FCP104N60F Allicdata Electronics
Allicdata Part #:

FCP104N60F-ND

Manufacturer Part#:

FCP104N60F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V TO-220
More Detail: N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-...
DataSheet: FCP104N60F datasheetFCP104N60F Datasheet/PDF
Quantity: 1226
Stock 1226Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 357W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6130pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Series: HiPerFET™, Polar™
Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FCP104N60F Application Field and Working Principle

FCP104N60F is a high-performance N-channel enhancement-mode power MOSFET with advanced Cell-Level-Shaping (CLS) technology. It is especially suitable for high-frequency power electronics such as switch mode power supply (SMPS) applications.

FCP104N60F features low drain-to-source resistance (RDS(on)), low gate-charge (Qg), fast switching speed and excellent body-diode forward characteristics.

Application Areas

FCP104N60F is often used in a variety of power switching and control applications, such as:

  • Switched Baseband Signaling, Data Processing and Control (SBS/DPC)
  • High-Frequency Switching Power Supplies (SWPS)
  • DC-DC Converters and Voltage Regulators
  • High-Speed Motor Drives and Inverters
  • Load Switches
  • Battery Management
  • General Power Switching

Working Principle

The FCP104N60F is an N-channel enhancement-mode power MOSFET, which means that it can be used with either a positive or negative-voltage gate to control the conduction of the device. When the gate voltage is below the threshold voltage (Vth) of the device, the device is in the OFF state. However, when a voltage greater than Vth is applied to the gate, the channel between Drain and Source is turned ON, enabling a drain-to-source current (Ids) to flow through the device.

The FCP104N60F utilizes advanced CLS technology which controls the depth and shape of the source-body (punch-through) depletion region. This allows for higher switching frequencies, more efficient power conversion, and improved power MOSFET performance.

FCP104N60F also features low gate-charge (Qg), low RDS(on), and fast switching speed.

Conclusion

FCP104N60F is a high-performance N-channel enhancement-mode power MOSFET that utilizes advanced CLS technology, which enables higher switching frequencies, improved power conversion, and better MOSFET performance. FCP104N60F is often used in a variety of power switching and control applications such as Switched Baseband Signaling, Data Processing and Control (SBS/DPC), High-Frequency Switching Power Supplies (SWPS), DC-DC Converters and Voltage Regulators, High-Speed Motor Drives and Inverters, Load Switches, Battery Management and General Power Switching.


The specific data is subject to PDF, and the above content is for reference

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