FCP190N65S3

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The FCP190N65S3 is an N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Fuji Electric. It is a single-sided MOSFET that offers high-speed switching performance and high reliability within low-voltage and small current applications.

The N-Channel MOSFET can be found in a variety of applications including power electronics, motor control systems, and various other low-voltage operations. The N-Channel MOSFET provides an ideal choice for power switching applications such as DC-DC conversion, frequency conversion, and others. The N-Channel MOSFET exhibits an extremely low on-resistance and extremely low gate-drain capacitance, resulting in increased efficiency in power delivery and minimized switching losses during operation.

Operating Principles of the FCP190N65S3

The FCP190N65S3 is an N-Channel single-sided MOSFET that operates according to the principles of metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This type of transistor is formed with metal oxide layers between a metal gate and the semiconductor material, which helps to regulate the amount of charge carriers moving through the channels. When the gate voltage of the MOSFET is increased, the electric field between the gate and channel allows more charge carriers to move through the channel and an increased current flows through the device.

The FCP190N65S3 has an extremely low on-resistance at room temperature, allowing it to switch very quickly and operate with high efficiency. It also has extremely low gate-drain capacitance, which helps to reduce switching losses and enables higher operating frequencies.

Advantages of the FCP190N65S3

The FCP190N65S3 provides high-speed switching and low-voltage operation with high efficiency, which makes it an ideal choice for power electronics and motor control systems. Its low gate-drain capacitance enables higher operating frequencies, which is beneficial for applications that require switching of high voltages at high frequencies. The device also has an extremely low on-resistance and is capable of operating at high temperatures, making it an optimal choice for high temperature environments. It is also highly reliable with a minimum breakdown voltage of at least 600V and rated power dissipation of 119W.

Conclusion

The FCP190N65S3 is a single-sided N-Channel MOSFET from Fuji Electric. It is designed to offer high-speed switching performance in low-voltage and small current applications. It has an extremely low on-resistance and extremely low gate-drain capacitance, which helps to reduce switching losses and enables high-speed switching. The FCP190N65S3 is highly reliable and capable of operating at temperatures up to 175°C. It is ideal for power electronics and motor control systems, and other applications that require high-speed switching of low voltages and small current.

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