FCP150N65F Allicdata Electronics
Allicdata Part #:

FCP150N65F-ND

Manufacturer Part#:

FCP150N65F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 650V 24A TO220
More Detail: N-Channel 650V 24A (Tc) 298W (Tc) Through Hole TO-...
DataSheet: FCP150N65F datasheetFCP150N65F Datasheet/PDF
Quantity: 371
Stock 371Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: HiPerFET™, Polar™
Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCP150N65F is one of the most popular MOSFETs for a wide range of applications. Basically, a MOSFET is a metal–oxide–semiconductor field-effect transistor that functions as a switch, amplifying or attenuating electric, signals, or current. It is an active electronic component that can be used to control the flow of electric current in both analogue and digital electronic circuits.

The FCP150N65F is a high-performance N-channel MOSFET with a voltage rating range of -55V to +150V and a power dissipation of up to 650W. It is a great choice for high-frequency switching applications, such as high-power motor control or switching power supplies. Its high electron mobility enables it to achieve high-frequency performance, with a Fast Switching Speed of 8-10ns and a high frequency Reverse Transfer Capacitance (Crss) of 31pF.

The FCP150N65F has an exceptionally low on-resistance. At the maximum operating temperature of 150°C and with a gate-to-source voltage of 4.5V, its on-resistance is approximately 0.90Ω. The low resistance helps to reduce an unnecessary power loss, as well as enhance the overall efficiency of the device. This makes the FCP150N65F ideal for applications where high switching efficiency is essential, such as DC/DC converters, PWM motor control circuits, and others.

Apart from its great application potential, the FCP150N65F has very good electrical characteristics. It has a high-temperature thermal resistance at 20°C/230°C of 1.08K/W, a maximum drain current of 38A, a maximum gate threshold voltage of ±10V, and an extremely low gate charge. These characteristics enable the device to deliver excellent results in applications which require a high level of performance.

When it comes to its working principle, the FCP150N65F combines strong electron- and hole-transporting properties of the silicon substrate with a strong electric field of the gate electrode. When the gate electrode is not providing the current, no drain current flows and the FCP150N65F is said to be in its off-state. On the other hand, when pressured by the gate voltage, the electric field appears at the channel, and the channel connects the drain to the source, thus allowing the current to flow from the drain to the source, thus making the FCP150N65F in its on-state.

Overall, the FCP150N65F can be used in a variety of different applications including DC/DC converters, PWM motor control circuits, general-purpose switching and more. Its low On-resistance, high gate threshold voltage and fast switching speed makes it an ideal choice for high-frequency applications. Its robustness and versatility makes it a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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