Allicdata Part #: | FCP165N65S3R0-ND |
Manufacturer Part#: |
FCP165N65S3R0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | SUPERFET3 650V TO220 PKG |
More Detail: | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-... |
DataSheet: | FCP165N65S3R0 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.9mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 154W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 400V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | SuperFET® III |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP165N65S3R0 Metal Oxide Field Effect Transistor (MOSFET) is an N-channel enhancement mode silicon gate field effect transistor featuring a very low ON resistance and fast switching. It is optimized for low-voltage, low-current applications such as power switch, and was designed for fast switching applications. It is suitable for high current switching, high frequency operation and low power losses.
Application Field
The FCP165N65S3R0 is commonly used as a switch, particularly in high frequency switching applications such as the output stage of DC-DC converters. It is also used in motor control applications and is often used as a power switch for various kinds of circuits, including DC-DC converters, voltage regulator modules and UPS systems.
In addition to its use as a switch, the FCP165N65S3R0 can also be used as an amplifier, a voltage regulator, and as a voltage or current getter. It is also commonly used in high frequency oscillator circuits, in power converters, and in switch-mode power supplies.
Working Principle
The FCP165N65S3R0 is an N-channel enhancement mode field effect transistor, meaning that it is made up of a large stack of thin layers of semiconductor material, with small electrons moving through the material. The electrons are controlled by an applied voltage; when the voltage is applied, the electrons will move from one region to another, and this creates a small current.
When the FCP165N65S3R0 is used as a switch, it works by controlling the amount of current that can flow between two points, usually an input and an output. When the gate voltage is applied, the electrons flow from the source to the drain, creating an electric field between the source and the drain. This electric field creates a strong force that pushes electrons away from the source and toward the drain, thus allowing current to flow.
When the gate voltage is removed, the electric field dissipates, and the electrons are pulled back toward the source, thus stopping the flow of current. This is the basic operating principle of the FCP165N65S3R0 switch.
Conclusion
The FCP165N65S3R0 is an N-channel enhancement mode MOSFET, which makes it well-suited for fast switching applications, particularly when used as a power switch. It is commonly used in power switch, motor control applications, and as an amplifier, voltage getter, or voltage regulator.
In summary, the FCP165N65S3R0 is an efficient and reliable switch, which is well-suited for a variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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