Allicdata Part #: | FCP16N60N-F102-ND |
Manufacturer Part#: |
FCP16N60N-F102 |
Price: | $ 2.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 16A TO220F |
More Detail: | N-Channel 600V 16A (Tc) 134.4W (Tc) Through Hole T... |
DataSheet: | FCP16N60N-F102 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 2.26425 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 134.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2170pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 52.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 199 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP16N60N-F102 is a high current and low gate charge N-Channel PowerTrench® MOSFET, manufactured by Fairchild Semiconductor.
The device is a 300 V, 17.1 A, 16 mΩ power MOSFET featuring fast switching performance with low gate charge, low internal gate resistance, and improved safe operating area (SOA), while its UltraFET™ technology offers a low RDS(ON) delivering outstanding performance and reliability.
FCP16N60N-F102 MOSFETs are best suited for high frequency/high speed switch-mode power supplies for computers, peripherals and home appliances, DC/DC conversions, motor control, power management and light dimming applications.
Working Principle
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, which is a type of transistor operating on the principle of electric field effect. It consists of three layers placed between two terminals - the source and the drain - and a gate terminal. When a voltage is applied to the gate, it creates an electric field that modulates the conductivity of a semiconductor channel connecting the source and the drain. This enables the current to flow between the two terminals, when appropriate voltage is applied.
The FCP16N60N-F102 MOSFET is designed using the PowerTrench® process technology to provide excellent switching performance and low gate charge. This technology enables the device to switch faster and with lower gate charge, while providing the lowest RDS(ON) of any other similar device in the market.
When the gate voltage of the FCP16N60N-F102 is positive relative to the source voltage, it turns ON, allowing current to flow from the source to the drain. When the gate voltage is low, the device is OFF and no current flows from the source to the drain. This device features a low ON resistance and a low gate charge, which ensures that the MOSFET can be rapidly switched. Additionally, it also features a wide SOA, which ensures that the device will reliably and safely operate in high temperature environments.
Conclusion
The FCP16N60N-F102 is an advanced N-Channel PowerTrench® MOSFET designed for use in high frequency and high speed switch-mode power supplies, DC/DC converters, motor control and power management applications. As it is designed using PowerTrench® process technology, it offers low RDS(ON), fast switching times, low gate charge and excellent SOA performance. Therefore, it is ideal for a variety of industrial and consumer applications where high power MOSFETs are required. Additionally, when compared to other similar devices, the FCP16N60N-F102 offers superior performance and reliability, making it an excellent choice for designers.
The specific data is subject to PDF, and the above content is for reference
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