| Allicdata Part #: | FDB20AN06A0-ND |
| Manufacturer Part#: |
FDB20AN06A0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 45A TO-263AB |
| More Detail: | N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Surface M... |
| DataSheet: |  FDB20AN06A0 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 90W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 45A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 45A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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FDB20AN06A0 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed to provide maximum performance in terms of efficiency, power density, and cost. It is a single-source, fixed-frequency MOSFET based on 6th-generation CoolMOS Technology. This device has a breakdown voltage rating of 20V and a maximum drain-source on-state resistance, or RDS (on), of 6 milliohms.
The FDB20AN06A0 has a wide variety of applications in the low- and medium-power market sectors. It can be used as a replacement for bipolar transistors in many applications, such as switching applications and motor control. In addition, the device is useful in applications where high output power, low switching loss, and low on-resistance are desirable. Some examples of such applications are synchronous rectification, DC/DC converters, motor control circuits, and Class D audio amplifiers.
The working principle of the FDB20AN06A0 is based on the MOSFET structure. A MOSFET consists of a gate, a drain, and a source. When a positive voltage is applied to the gate, it creates an inversion layer between the source and the drain, which allows current to flow through the MOSFET. The current flow is decided by the area of the inversion layer and the channel length. The current flow can be selectively or completely blocked depending on the voltage applied to the gate. This is the basic mode of operation of the MOSFET. The FDB20AN06A0 has an additional gate-side dwell-time control circuit which enables the device to provide superior off-time characteristics for SMPS (Switched Mode Power Supply) applications.
In summary, the FDB20AN06A0 is a MOSFET device with a 20V breakdown voltage and a 6 milliohm RDS (on). It is suitable for low- and medium-power applications such as switching applications, motor control circuits, and synchronous rectification. The device also has a gate-side dwell-time control circuit which improves its off-time characteristics for SMPS applications. It is a highly cost-effective device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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