| Allicdata Part #: | FDB2552-F085TR-ND |
| Manufacturer Part#: |
FDB2552-F085 |
| Price: | $ 1.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N CH 150V 5A TO-263AB |
| More Detail: | N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface... |
| DataSheet: |  FDB2552-F085 Datasheet/PDF |
| Quantity: | 800 |
| 800 +: | $ 0.91645 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 37A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDB2552-F085 is a field-effect transistor (FET) designed for high power applications. It is a single N-channel enhancement mode device with integrated protection diodes. The FDB2552-F085 has a drain-source voltage of 55 volts and a drain current of 5 amps. This device is capable of handling high frequency switching, and can be used in DC-DC converters, motor control circuits, as well as other applications.
The working principle of the FDB2552-F085 is based on the field-effect principle, which states that a voltage applied to the gate can control current flow between the drain and the source. When a positive voltage is applied to the gate, it induces a charge carrier concentration in the channel between the source and the drain. This increases the conductance of the channel, allowing current to flow from the drain to the source. Conversely, when the gate voltage is made negative, the induced carriers are swept in the opposite direction, causing the channel to become resistive, which reduces the current flow between the drain and drain.
The FDB2552-F085 is mainly used in high-current, high-voltage DC applications. It can be used in high-current switching and DC-DC converter circuits, as well as motor control, lighting, and other high-power applications. The FDB2552-F085 provides low on-resistance and fast switching, making it well suited for high-speed applications. Its integrated protection diodes provide protection against over-current and over-temperature conditions.
In conclusion, the FDB2552-F085 is a single N-channel high power FET designed for applications that require high current handling and fast switching. It has an integrated protection diode, which provides protection from over-current and over-temperature conditions. The FDB2552-F085 is mainly used in high-current DC applications, such as motor control, DC-DC converters, lighting, and other high-power circuits. Its high current handling capabilities and fast switching make it well suited for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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