FDB28N30TM Discrete Semiconductor Products |
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Allicdata Part #: | FDB28N30TMTR-ND |
Manufacturer Part#: |
FDB28N30TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 28A D2PAK |
More Detail: | N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²... |
DataSheet: | FDB28N30TM Datasheet/PDF |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 129 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB28N30TM by Fairchild Semiconductor is a N-Channel 30V PowerTrench® MOSFET which features fast switching speeds, low RDS(on) and low gate charge. FDB28N30TM is designed for excellent performance in Class D audio amplifiers, Switch mode power supplies, level shifting and bus switch applications.
MOSFETs are voltage controlled transistors that are used as switches or amplifiers for controlling high-frequency signals, high-speed switching, and other applications where high-power handling is needed. FDB28N30TM is a N-channel enhancement type MOSFET which is used as a switch in many applications.
FDB28N30TM operates in either the linear or saturation region of a MOSFET, depending on the relative magnitude of the voltage applied to its gate. In the linear region, the MOSFET behaves as a linear resistor whose resistance (RDS(on)) is controlled by the applied gate voltage. This allows for accurate and efficient control of current in circuits with high load power dissipation. The low voltage operation in this region makes it an ideal choice for level shifting and bus switching applications. In saturation mode, the MOSFET is able to withstand higher voltage swings, which makes it well suited for switching circuits.
FBD28N30TM is also able to switch very fast due to its low gate charge and small input capacitance. This makes it useful in high-frequency switching applications, such as Class D audio amplifiers and switch mode power supplies. Its low RDS(on) values make it highly efficient, and its low thermal impedance makes it ideal for power supply designs that require high speed switching. Additionally, its high impedance state prevents the flow of current through it when not in operation, making it suitable for use as a protection device.
In conclusion, FDB28N30TM is an ideal choice for applications that require fast switching, low RDS(on) and low gate charge. It is particularly well-suited for level shifting, bus switching, Class D audio amplifiers and switch mode power supplies. With its low thermal impedance and high impedance state, it is highly reliable and efficient, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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