Allicdata Part #: | FDB24AN06LA0-ND |
Manufacturer Part#: |
FDB24AN06LA0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 40A TO-263AB |
More Detail: | N-Channel 60V 7.8A (Ta), 40A (Tc) 75W (Tc) Surface... |
DataSheet: | FDB24AN06LA0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDB24AN06LA0 is a type of field-effect transistor (FET) that is specifically designed to function as a low-noise, high-linearity amplifier at frequencies up to 2400 MHz. Due to its excellent linearity and low noise figure, it is particularly well-suited for use in systems that require high-frequency signal amplification, such as radios, cellular networks and satellite communications systems.
A field-effect transistor is a three-terminal semiconductor device that consists of a layer of confined electrical charge, typically a junction of silicon-doped polycrystalline silicon. In FDB24AN06LA0\'s case, the electric charge is confined between source and drain electrodes and is modulated by a control gate, which modulates the current flow between source and the drain. All three terminals have different functions, making the FET able to amplify or switch signals.
FDB24AN06LA0 transistors are designed to operate under high frequency conditions with excellent linearity, making them suitable for use in high-frequency applications as amplifiers and frequency converters. They also feature an low noise figure, making them ideal for applications requiring low-noise operation such as sensitive receivers.
FDB24AN06LA0\'s structure is based on the traditional MOSFET technology and allows for optimized performance in frequency up to 2400MHz. It has an N-channel diode architecture and features an ultra-low drain-source on-resistance of < 0.45 ohms. This low resistance ensures low thermal resistance, allowing for better performance at higher temperatures.
The FDB24AN06LA0 is also designed for easy implementation. Its 3-pin package, which is called a UMT (Ultra-Miniature) package, is designed to simplify the installation process. Its single-gate construction allows for simpler gate drive applications, while its low input capacitance can help reduce distortion, noise, and size of the circuit. In addition, its low output capacitance can help reduce radiated EMI (electromagnetic interference) and reduce power consumption.
In summary, FDB24AN06LA0 transistors are an ideal choice for applications requiring a low-noise, high-linearity amplifier at frequencies up to 2400 MHz. Their single-gate construction and low on-resistance make them suitable for simpler gate drive applications and their low input capacitance can help reduce distortion, noise, and size of the overall circuit. Additionally, their low output capacitance contributes to reduced EMI and power consumption, making them an excellent option for high-frequency, low-noise operations.
The specific data is subject to PDF, and the above content is for reference
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