FDB20N50F

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FDB20N50F application field and working principle
FDB20N50F is a type of silicon insulated-gate field electron transistor (Insulated-Gate Field-Effect Transistor, IG-FET), which is also known as a metal-oxide-semiconductor field effect transistor (MOSFET). It is useful for fast, efficient and easy switching of electronic signals. The FDB20N50F has a maximum pulse forward drain current of 20A and a drain–source breakdown Voltage of 500V. Its drain–source On-state resistance is 4.74mΩ at 4.5V and 25°C. This specific MOSFET has numerous application fields in automotive, consumer, and industrial electronics.

When it comes to the working principle, FDB20N50F is composed of a gate, a source and a drain, which are electrically isolated from each other by a thin insulating layer of oxide (SiO₂) on the surface of a silicon substrate. By applying a voltage to the gate of the MOSFET transistor, this voltage creates an electric field that controls the flow of electrons and holes between the source and the drain. If the gate voltage is less than the threshold voltage of the MOSFET, the current is blocked, and no current will flow between the source and drain. However, if the gate voltage is greater than the threshold voltage, the current will pass between the source and drain, which is known as saturation.

For FDB20N50F, it has an enhanced SOA with EMOIS, which stands for Electro-Motive Over-current Integrated System. This system increases the current capacity of the transistor and provides a reliable protection for the power device. In addition, FDB20N50F also features a persistent higher junction temperature with built-in heat sink. It also features high frequency characteristics, which make it ideal for switching applications. Furthermore, the MOSFET transistor offers low total gate charge and fast switching speed, low gate drive power, and high current capacity.

In conclusion, FDB20N50F is a type of MOSFET transistor with numerous application fields in automotive, consumer, and industrial electronics. It has a maximum pulse forward drain current of 20A and a drain–source breakdown Voltage of 500V. It has an enhanced SOA with EMOIS, which increases the current capacity of the transistor. It also features a persistent higher junction temperature with built-in heat sink, high frequency characteristics, low total gate charge and fast switching speed, low gate drive power, and high current capacity.

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