Allicdata Part #: | FDB2614TR-ND |
Manufacturer Part#: |
FDB2614 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 62A D2PAK |
More Detail: | N-Channel 200V 62A (Tc) 260W (Tc) Surface Mount D²... |
DataSheet: | FDB2614 Datasheet/PDF |
Quantity: | 3200 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 260W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 99nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 31A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB2614 is a single-N-channel, enhancement-mode, insulated-gate field-effect transistor. This component’s features include low drain-source ON-resistance, low threshold voltage, high-switching speed, low-leakage current, low-gate-charge and low-gate-to-drain charge ratio.
This component is commonly used in applications such as switching regulator circuits, high-speed switching circuits, amplifiers, motor speed controllers, and amplifiers. The high-speed switching capability of the FDB2614 makes it suitable for a wide range of applications that require high-frequency response.
The operating principle of the FDB2614 is based on a voltage effect created by the presence of a gate terminal. The gate terminal is modulated by the source-to-drain voltage, and can be used to control the correlation between gate-source and gate-drain voltages. As the source-to-drain voltage is increased, the gate-source voltage increases and the gate-drain voltage decreases.
The device is protected against electrostatic discharge (ESD) by its built-in Zener protection diodes and its low operating voltage is referenced to the drain rather than the gate. This helps to reduce the power loss due to dV/dt. The FDB2614 is also designed to minimize parasitic capacitance, ultimately providing better electrical performance.
The FDB2614 is designed to minimize leakage current, a major source of power loss in switching circuits. The device utilizes a low RDS(ON) along with a low turn-on threshold voltage to minimize the leak current. A low gate-to-drain charge ratio helps to increase the switching speed of the device, allowing it to quickly transition between states.
The FDB2614 is able to achieve high-switching speeds due to an extremely fast rising and falling time. This is enabled by its unique design, which includes an integrated thermal protection feature and an adjustable P-channel injection structure. These features help to reduce the time it takes to turn the device on and off, resulting in improved performance.
The FDB2614 is designed for use in a wide range of applications, such as motor speed controllers, switching regulators, and amplifiers. It is well-suited for high-frequency switching applications because of its low drain-source ON-resistance and its high-switching speeds. This makes it an ideal choice for applications that require fast switching or a low-leakage current.
The specific data is subject to PDF, and the above content is for reference
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