FDD20AN06A0-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDD20AN06A0-F085TR-ND |
Manufacturer Part#: |
FDD20AN06A0-F085 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 45A DPAK |
More Detail: | N-Channel 60V 8A (Ta), 45A (Tc) 90W (Tc) Surface M... |
DataSheet: | FDD20AN06A0-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.35581 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 45A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDD20AN06A0-F085 is a high-voltage, high-current field-effect transistor (FET) manufactured by Fairchild Semiconductor. This short channel, N-channel MOSFET is ideal for high voltage applications as it is rated for 20V minimum drain-source breakdown voltage, 10V drain-source OFF-state voltage, and 8A continuous drain current at 25 °C case temperature. This device has both linear and saturated (switching) applications, making it a versatile component for both analog and digital circuits.
The FDD20AN06A0-F085 is an enhancement-mode transistor, meaning that it is turned “on” when the gate-source voltage (V GS) is more positive than a certain threshold voltage (V TH). This device has an advanced threshold voltage of -4.5V, ensuring that the transistor will remain in the OFF-state when the gate voltage is below the threshold voltage. This allows the transistor to be used as a switch when used with digital logic signals.
This device uses a drain-source configuration, meaning that when operating correctly, current will flow from the drain to the source. To turn the transistor on, the gate voltage is set higher than the threshold voltage. This allows the conduction channel to form between the source and drain, allowing current to flow through the device. To turn the device off, the gate is held near V DD (drain voltage), or the voltage source connected to the drain, allowing for a high degree of control. This feature makes the FDD20AN06A0-F085 ideal for use in digital circuits such as pulse-width modulation (PWM) circuits.
The FDD20AN06A0-F085 can also be used in analog circuits. The linear gain of this device can be adjusted using its gate voltage. At high drain voltages, the linear gain of this device can be varied from 16mV to 300mV/V, making it ideal for linear amplifier applications. This allows for both higher gain and better noise performance than a digital amplifier. This device is also often used in audio applications, where it can achieve an excellent signal-to-noise ratio.
The FDD20AN06A0-F085 is designed to handle high voltages and is well-suited for motor control and high voltage DC power supplies. It can also be used in high voltage switching applications such as relays, solenoids, and motor starters. This device is also ideal for general-purpose power management due to its wide range of applications and its low power consumption.
The FDD20AN06A0-F085 is a versatile device that can be used in both analog and digital circuits. Its wide range of applications and low power consumption make it ideal for a variety of power management and high voltageDC power supply applications. It is well-suited for motor control and for high voltage switching applications, and its linear gain can be used for general-purpose amplifier applications. This device is a great choice for all kinds of application where a high-voltage, high-current N-channel MOSFET is needed.
The specific data is subject to PDF, and the above content is for reference
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