FDD20AN06A0-F085 Allicdata Electronics

FDD20AN06A0-F085 Discrete Semiconductor Products

Allicdata Part #:

FDD20AN06A0-F085TR-ND

Manufacturer Part#:

FDD20AN06A0-F085

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 45A DPAK
More Detail: N-Channel 60V 8A (Ta), 45A (Tc) 90W (Tc) Surface M...
DataSheet: FDD20AN06A0-F085 datasheetFDD20AN06A0-F085 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.35581
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD20AN06A0-F085 is a high-voltage, high-current field-effect transistor (FET) manufactured by Fairchild Semiconductor. This short channel, N-channel MOSFET is ideal for high voltage applications as it is rated for 20V minimum drain-source breakdown voltage, 10V drain-source OFF-state voltage, and 8A continuous drain current at 25 °C case temperature. This device has both linear and saturated (switching) applications, making it a versatile component for both analog and digital circuits.

The FDD20AN06A0-F085 is an enhancement-mode transistor, meaning that it is turned “on” when the gate-source voltage (V GS) is more positive than a certain threshold voltage (V TH). This device has an advanced threshold voltage of -4.5V, ensuring that the transistor will remain in the OFF-state when the gate voltage is below the threshold voltage. This allows the transistor to be used as a switch when used with digital logic signals.

This device uses a drain-source configuration, meaning that when operating correctly, current will flow from the drain to the source. To turn the transistor on, the gate voltage is set higher than the threshold voltage. This allows the conduction channel to form between the source and drain, allowing current to flow through the device. To turn the device off, the gate is held near V DD (drain voltage), or the voltage source connected to the drain, allowing for a high degree of control. This feature makes the FDD20AN06A0-F085 ideal for use in digital circuits such as pulse-width modulation (PWM) circuits.

The FDD20AN06A0-F085 can also be used in analog circuits. The linear gain of this device can be adjusted using its gate voltage. At high drain voltages, the linear gain of this device can be varied from 16mV to 300mV/V, making it ideal for linear amplifier applications. This allows for both higher gain and better noise performance than a digital amplifier. This device is also often used in audio applications, where it can achieve an excellent signal-to-noise ratio.

The FDD20AN06A0-F085 is designed to handle high voltages and is well-suited for motor control and high voltage DC power supplies. It can also be used in high voltage switching applications such as relays, solenoids, and motor starters. This device is also ideal for general-purpose power management due to its wide range of applications and its low power consumption.

The FDD20AN06A0-F085 is a versatile device that can be used in both analog and digital circuits. Its wide range of applications and low power consumption make it ideal for a variety of power management and high voltageDC power supply applications. It is well-suited for motor control and for high voltage switching applications, and its linear gain can be used for general-purpose amplifier applications. This device is a great choice for all kinds of application where a high-voltage, high-current N-channel MOSFET is needed.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDD2" Included word is 14
Part Number Manufacturer Price Quantity Description
FDD2670 ON Semicondu... -- 1000 MOSFET N-CH 200V 3.6A D-P...
FDD2512 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 150V 6.7A D-P...
FDD2612 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 4.9A D-P...
FDD20AN06A0 ON Semicondu... -- 1000 MOSFET N-CH 60V 45A D-PAK...
FDD24AN06LA0 ON Semicondu... -- 1000 MOSFET N-CH 60V 40A D-PAK...
FDD26AN06A0 ON Semicondu... -- 1000 MOSFET N-CH 60V 36A D-PAK...
FDD2570 ON Semicondu... -- 1000 MOSFET N-CH 150V 4.7A D-P...
FDD24AN06LA0_SB82179 ON Semicondu... 0.0 $ 1000 INTEGRATED CIRCUITN-Chann...
FDD2572 ON Semicondu... -- 1000 MOSFET N-CH 150V 29A D-PA...
FDD2582 ON Semicondu... -- 111 MOSFET N-CH 150V 21A DPAK...
FDD20AN06A0-F085 ON Semicondu... 0.39 $ 1000 MOSFET N-CH 60V 45A DPAKN...
FDD26AN06A0-F085 ON Semicondu... 0.34 $ 1000 MOSFET N-CH 60V 7A DPAK-3...
FDD24AN06LA0-F085 ON Semicondu... -- 1000 MOSFET N-CH 60V 40A TO-25...
FDD2572-F085 ON Semicondu... -- 1000 MOSFET N-CH 150V 29A DPAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics