FDD24AN06LA0-F085 Discrete Semiconductor Products

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The FDD24AN06LA0-F085 is a widely used three-terminal N-channel MOSFET device of the ThermalShutdownTM family. It is specifically designed for applications in high-efficiency low-/mid-voltage AC/DC power supplies, DC/DC converters, high-frequency switching, tablets, smartphones and solid-state watts, and other electronic devices.

The FDD24AN06LA0-F085 is designed to serve the best performance with the highest efficiency and reliability, while employing a very low gate-biasing voltage and extremely low gate charge. It is also designed with a built-in, temperature- logic circuit that provides a highly reliable over-temperature shutdown protection by suspending the main power switch as soon as the temperature reaches the specified limit.

Working Principle:

The FDD24AN06LA0-F085 is a three-terminal N-channel MOSFET device which consists of an ultra-low gate-threshold voltage, vertical channel die with a silicon dioxide (SiO₂) gate oxide, an integrated temperature-logic circuit, and a drain-source circuit for current flow. The device has a high breakdown voltage and low ON-resistance, enabling it to deliver high efficiency and reliable performance. When low gate-biasing voltage is applied on the gate terminal, the Gate-Source junction turns off, resulting in the drain-source voltage being at a low, non-conductive state. As the gate-biasing voltage is further raised, the Gate-Source junction turns on, resulting in the drain-source voltage being at a high, conductive state.

When the temperature rises above the specified limit, the temperature-logic circuit is triggered, resulting in the gate output voltage decreasing significantly. This, in turn, decreases the drain-source voltage to a non-conductive level as well as suspending main power switch as soon as the temperature reaches the specified limit, safeguarding the device and other related components.

Application Field:

The FDD24AN06LA0-F085 is widely used in many applications because of its low ON-resistance and very low gate-biasing voltage, high and reliable breakdown voltage, and low power consumption. These features make it ideal for applications such as high-efficiency low-/mid-voltage AC/DC power supplies, DC/DC converters, high-frequency switching, tablets, smartphones and solid-state watts, and other electronic devices. Additionally, it is also employed in applications where temperature-logic circuit is needed for temperature protection, such as automotive electronics, computers, and air-conditioning and other home appliances.

In summation, the FDD24AN06LA0-F085 three-terminal N-channel MOSFET offers excellent features that make it suitable for applications in high-efficiency low-/mid-voltage AC/DC power supplies, DC/DC converters, high-frequency switching, tablets, smartphones and solid-state watts, and other electronic devices. Its low gate-biasing voltage, its low power consumption, and its built-in temperature-logic circuit also make it ideal for applications where temperature protect is needed.

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