
Allicdata Part #: | FDD24AN06LA0_SB82179-ND |
Manufacturer Part#: |
FDD24AN06LA0_SB82179 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | N-Channel 60V 7.1A (Ta), 40A (Tc) 75W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.1A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The FDD24AN06LA0_SB82179 transistor is a part of the N-MOSFET family. It is a high voltage, 60V, N-channel MOSFET with a low drain-source on-resistance (RDS(on)) and high transconductance. The device is an enhancement mode MOSFET, which is used to amplify the input voltage levels into larger output voltages. The transistor is provided in the same package as other types of MOSFETs, such as the Power MOSFETs, and can be used for switching, voltage and current sensing and other applications.
The FDD24AN06LA0_SB82179 transistor is a versatile device that can be used in a variety of applications, including motor control, DC-DC conversion, switch mode power supplies, consumer electronics, and automotive electrical systems. It is particularly well-suited for high-power, high-voltage applications, as it has a low RDS(on)) and can handle up to 60V without breaking down. In addition, it has excellent thermal characteristics, ensuring stable performance over a wide range of temperatures.
The working principle of the FDD24AN06LA0_SB82179 transistor is relatively simple. When the gate voltage is low, the drain-source channel is off, and the MOSFET does not conduct. When the gate voltage is high, the drain-source channel turns on, and the MOSFET begins to conduct. The higher the gate voltage, the greater the drain-source current that can flow through the MOSFET. This makes it an ideal device for controlling high-power loads, as it can be quickly and easily adjusted to increase or decrease the load current. The device can be used as a switch, an amplifier, and even as a motor control device.
The FDD24AN06LA0_SB82179 transistor is a highly reliable device that offers low power loss, minimal noise, and excellent temperature stability. It can help reduce power consumption and improve system performance. It is also relatively inexpensive, making it a popular choice for many applications. Furthermore, its simple design makes it easy to incorporate into existing systems.
In conclusion, the FDD24AN06LA0_SB82179 transistor is an effective and efficient way to control high-power loads. It has a low RDS(on)), excellent thermal characteristics, and a wide range of applications. The device is relatively inexpensive and easy to incorporate into existing systems, making it a great choice for designers seeking power efficiency and performance.
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