FDD2572 Discrete Semiconductor Products |
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| Allicdata Part #: | FDD2572TR-ND |
| Manufacturer Part#: |
FDD2572 |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 150V 29A D-PAK |
| More Detail: | N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Surface... |
| DataSheet: | FDD2572 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.62000 |
| 10 +: | $ 0.60140 |
| 100 +: | $ 0.58900 |
| 1000 +: | $ 0.57660 |
| 10000 +: | $ 0.55800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 135W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 54 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta), 29A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDD2572 is a single voltage field-effect transistor (FET) that is designed with high reliability, low on-resistance, and low gate charge. It is used in a variety of applications such as DC-DC converters, LED drivers, and motor controls. The FDD2572 has a threshold voltage range of -0.2V to 5V and a drain current range of 5A to 20A. It is available in a TO-220 package, which is commonly used for FETs.
Field-effect transistors are electronic devices composed of three terminals: the source, the gate, and the drain. A FDD2572 can be thought of as a switch that is controlled by a voltage applied to the gate terminal. When the gate voltage is high, current can flow from the source to the drain; when the gate voltage is low, current is blocked. This type of device is often used for power switching applications.
The working principle of the FDD2572 is based on the relationship between the source-drain current and the gate-source voltage. When the gate-source voltage VGS is greater than the threshold voltage V TH, the channel between the source and the drain is established and the current can flow. This relationship is described by the equation: I D = K (VGS - VTH)^2, where K is a constant called the transconductance.
In addition to the relationship between the source-drain current and the gate-source voltage, a FDD2572 has a body diode. This diode is formed between the source and the drain due to the internal construction of the FET. This diode can be used to protect the FET from an accidental disconnection of the gate. However, this diode also increases the on-resistance of the device, so it should be used with caution.
The FDD2572 is a versatile device that can be used in a variety of applications. It is typically used for DC-DC converters, LED drivers, motor controls, and other power switching applications. Due to its low on-resistance and low gate charge, the FDD2572 is a good choice for these applications where high efficiency is needed. The device is also relatively inexpensive and is easy to use. This makes it a popular choice for many applications.
In conclusion, the FDD2572 is a single voltage field-effect transistor with a wide range of applications. It has a threshold voltage range of -0.2V to 5V and a drain current range of 5A to 20A. The working principle of the device is based on the relationship between the source-drain current and the gate-source voltage. It is typically used for DC-DC converters, LED drivers, motor controls, and other power switching applications. The FDD2572 is a highly reliable, low-cost device that is easy to use and has excellent performance in applications where high efficiency is needed.
The specific data is subject to PDF, and the above content is for reference
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FDD2572 Datasheet/PDF