FDD24AN06LA0 Allicdata Electronics
Allicdata Part #:

FDD24AN06LA0-ND

Manufacturer Part#:

FDD24AN06LA0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 40A D-PAK
More Detail: N-Channel 60V 7.1A (Ta), 40A (Tc) 75W (Tc) Surface...
DataSheet: FDD24AN06LA0 datasheetFDD24AN06LA0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDD24AN06LA0 is a MOSFET transistor that is a part of the Power MOSFET family of transistors. It is mainly used in automotive and telecommunications applications, as well as robotics, power systems, and solid state relays, where a high power, low noise and low-input capacitance device is necessary. The device is available in a TO-254 package, which is small enough to be used in high-density applications.

The FDD24AN06LA0 operates in full bridge configuration and is intended for use as a power switch in a single stage DC/DC converter circuit. It is capable of switching loads of up to 150 watts. The device has an internal Schottky diode that takes current from the source and delivers it to the drain in order to avoid power loss during switching. The device also features a very low gate-source capacitance that helps to reduce switching time and energy loss.

The working principle of the FDD24AN06LA0 is quite simple. When the input voltage is applied to the gate, it induces a channel between the drain and the source. This channel permits electric current to flow from the source to the drain. The current will then be directed to the load. The device can be used in either enhancement mode or depletion mode operation. The device is controlled by the gate voltage, which increases or decreases the channel current accordingly.

The FDD24AN06LA0 also provides good thermal characteristics that allow it to be used in high-temperature applications. The device can reach a temperature rating of 175°C and an operating current level of around 25A. The device also features an on-state resistance of less than 0.07ohms and a maximum gate-source voltage rating of ±20V. The device is rated for operation at up to 55V.

In summary, the FDD24AN06LA0 is a robust and reliable power MOSFET that is suitable for use in a variety of applications. It has a very low input capacitance and features good thermal characteristics that allow it to be used in high-temperature applications. The device operates in full bridge configuration and is capable of switching loads of up to 150 watts. The device is available in a TO-254 package, which is small enough to be used in high-density applications. The working principle of the FDD24AN06LA0 is quite simple, and the device is controlled by the gate voltage. The device can reach a temperature rating of 175°C and an operating current level of around 25A, with an on-state resistance of less than 0.07ohms. The device is rated for operation at up to 55V.

The specific data is subject to PDF, and the above content is for reference

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