FDFS2P102 Allicdata Electronics

FDFS2P102 Discrete Semiconductor Products

Allicdata Part #:

FDFS2P102TR-ND

Manufacturer Part#:

FDFS2P102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 3.3A 8-SOIC
More Detail: P-Channel 20V 3.3A (Ta) 900mW (Ta) Surface Mount 8...
DataSheet: FDFS2P102 datasheetFDFS2P102 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Field Effect Transistor commonly known as FET is a three terminal device with source, drain and gate terminal. It is an unipolar transistor with current transport only in one direction. FET2P102 is an enhancement mode n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for low to medium voltage, high speed switch and amplifier applications. This device has a Drain-Source breakdown voltage of 100V and a gate-source breakdown voltage of 40V. It is rated for 80A drain current and has a drain-source resistance of 9ohm and gate-source resistance of 9ohm. In other words, it can handle load currents of up to 80A and high gate drive voltages of up to 40V. This MOSFET is suitable for a wide range of commercial and industrial applications such as motor control, power conversion, inverters and amplifiers.FETs work based on the principle of a voltage-controlled current or voltage source. FETs are voltage-controlled, field effect devices. The gate-source resistance of FETs is low when no voltage is applied at the gate and increases as the voltage applied across the gate-source terminal increases. The voltage applied to the gate terminal controls the current flow between source and drain. When the gate-source voltage exceeds the specified threshold, the device turns on and allows current to flow freely between source and drain. When the gate voltage is set to zero voltage, the device acts as an open switch, blocking any current flow through the device.The FET2P102 device acts as an electronic switch by passing and blocking current based on the voltage applied to the gate terminal. When the voltage at the gate exceeds the threshold voltage, the device turns on and allows current flow from source to drain. When the gate voltage falls below the threshold voltage, the device is turned off and current is blocked. Thus, this device can be used as a switch for controlling the flow of current in various applications.For motor control applications, the device can be used to control the speed and current of motors. The gate terminal can be supplied with a control signal that varies according to the desired speed and current of the motor. The voltage applied to the gate terminal will control the flow of current between the source and drain terminals and thus, the speed and current of the motor can be varied.FETs are also used in power converters. In these applications, the device is used to switch current in an inverter or converter circuit. A high frequency pulse is supplied to the gate terminal of the FET, causing the device to rapidly switch between on and off states. This results in the current being switched in the output of the inverter or converter circuit, resulting in the desired voltage and current level. FETs are also used in amplifier circuits. In these circuits, the device acts as a voltage-controlled current source. The amplifier circuit is designed such that the gate-source voltage is adjusted to vary the current flow between the source and drain terminals. This means the output signal of the amplifier is proportional to the input signal applied to the gate. The FET2P102 is a versatile device with multiple applications. It is well suited for motor control, power conversion, inverters and amplifier applications. Due to its ability to rapidly switch between on and off states, it is also suitable for high speed switching applications. The device is designed to handle high currents, allowing it to be used in applications such as motor control and power conversion. With its low on-resistance and high breakdown voltages, it is an ideal device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDFS" Included word is 10
Part Number Manufacturer Price Quantity Description
FDFS2P102A ON Semicondu... -- 1000 MOSFET P-CH 20V 3.3A 8-SO...
FDFS2P102 ON Semicondu... -- 1000 MOSFET P-CH 20V 3.3A 8-SO...
FDFS2P103A ON Semicondu... -- 1000 MOSFET P-CH 30V 5.3A 8-SO...
FDFS2P103 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 30V 5.3A 8-SO...
FDFS6N303 ON Semicondu... -- 1000 MOSFET N-CH 30V 6A 8-SOIC...
FDFS2P753AZ ON Semicondu... 0.0 $ 1000 MOSFET P-CH 30V 3A 8-SOP-...
FDFS6N548 ON Semicondu... 0.42 $ 1000 MOSFET N-CH 30V 7A 8-SOIC...
FDFS2P106A ON Semicondu... -- 12500 MOSFET P-CH 60V 3A 8-SOIC...
FDFS6N754 ON Semicondu... 0.3 $ 2500 MOSFET N-CH 30V 4A 8-SOIC...
FDFS2P753Z ON Semicondu... -- 5000 MOSFET P-CH 30V 3A 8-SOIC...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics