FDFS6N548

The FDFS6N548 Power MOSFET is a single N-Channel, enhancement mode device that has been specially developed for high power applications. It is suitable for use in audio amplifiers, motor control and power switching applications. It features a wide range of device characteristics that make it ideal for these applications.

Features

• Available in through hole packaging
• On resistance of 2.5 Ω at 10V
• Gate threshold voltage of 2 V
• On resistance of 0.3 Ω at 25V
• High power capability of 500 W
• High operating frequency of 1Mhz
• N-channel device

Application field and working principle

The FDFS6N548 Power MOSFET is designed for use in a variety of applications including, audio amplifiers, motor control, and power switching applications. The device is constructed using an N-channel MOSFET and is able to operate at high frequency and with high power, making it ideal for high power applications. The device has an on resistance of 2.5 Ω at 10V and a gate threshold voltage of 2V, meaning that it can be easily driven to turn on or off. It also has a high current capability of 500W which makes it capable of handling high power applications.

The FDFS6N548 operates by utilizing the internal structure of the MOSFET. It features a channel region formed between a source and a drain. When a voltage is applied to the gate of the MOSFET, it creates an electric field. This electric field causes the electrons in the channel region to be attracted towards the gate, thereby allowing current to flow from the source to the drain. As the voltage applied to the gate increases, the current conductivity of the device increases. This allows for higher currents to flow in the device at higher voltages.

The FDFS6N548 is a very versatile device, and can be used in a variety of applications. It is suitable for use in audio amplifiers, motor controls, and power switching applications. It can also be used in power conversion applications, where it is used to convert DC to AC or vice versa. In addition, it can be used in high power applications, such as in solar panel inverters and UPS systems.

Conclusion

The FDFS6N548 Power MOSFET is a single N-Channel, enhancement mode device that has been specifically designed for high power applications. It features a wide range of device characteristics that make it ideal for various applications such as audio amplifiers, motor control, and power switching applications. It has an on resistance of 2.5 Ω at 10V, a gate threshold voltage of 2 V, an on resistance of 0.3 Ω at 25V, and a high power capability of 500 W. It also has a high operating frequency of 1Mhz, making it capable of handling high power applications with ease. With its wide range of features, the FDFS6N548 is a great choice for anyone looking for a powerful and reliable MOSFET.