![FDFS2P106A Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | FDFS2P106ATR-ND |
Manufacturer Part#: |
FDFS2P106A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 3A 8-SOIC |
More Detail: | P-Channel 60V 3A (Ta) 900mW (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 714pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDFS2P106A is a type of Field Effect Transistor (FET). It is also known as a Single Insulated Gate Bipolar Transistor (IGBT), and it is commonly used in power applications. The FDFS2P106A is a P-Channel MOSFET, which is designed to be used in power stages and systems that require both high efficiency and dynamic operation. This makes the device suitable for power switching applications such as RF power amplifiers, high-performance motor drives, Uninterruptible Power Supplies (UPS), and industrial amplifier stages.
FDFS2P106A is based on depletion-mode technology, as it operates with an extremely low saturation voltage. This provides extra design flexibility and improved performance in various applications. It also provides higher current-handling capabilities, high frequency stability and switching speeds, and superior reliability. This makes the device particularly suitable for power supply designs that need high efficiency, high fidelity performance, high power handling abilities and quick switching speeds.
The FDFS2P106A is an N-Channel MOSFET-based device, meaning it uses a metal oxide on the gate and a silicon substrate on the drain and the source. It works by varying the effective gate-to-source voltage, which modulates the flow of electrons from the drain to the source. This allows the device to be used to control current by limiting the flow of electrons, or to provide electrical isolation between two circuits.
The FDFS2P106A also features an integrated thermal shutdown circuit that is triggered when the device temperature exceeds a certain predetermined threshold. This prevents the device from overheating and ensures the device operates within its safe working limits. It also incorporates a dual sense electrical characteristics, which makes it extremely compatible with the various voltage ranges that can be found in the marketplace.
FDFS2P106A is a reliable, cost-effective and widely-adaptable power switching device. Its depletion-mode technology means it is highly efficient at all operating conditions, and its thermal shutdown circuit ensures that it operates within its safe operating limits. The device is most commonly found in power stages, high performance motor drives and UPS systems, due to its superior reliability and high frequency stability.
The specific data is subject to PDF, and the above content is for reference
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