Allicdata Part #: | FDFS2P103TR-ND |
Manufacturer Part#: |
FDFS2P103 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 5.3A 8-SOIC |
More Detail: | P-Channel 30V 5.3A (Ta) 900mW (Ta) Surface Mount 8... |
DataSheet: | FDFS2P103 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 528pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 59 mOhm @ 5.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDFS2P103 is a type of field effect transistor (FET) which is a current-controlled, three-terminal semiconductor device. This type of transistor is also known as insulated gate field effect transistor (IGFET) or MOSFET (metal-oxide-semiconductor FET). The FDFS2P103 is a single FET device with three pins, source, drain and gate. The FDFS2P103 using high-speed, low-noise technology makes it suitable for use in digital signal processing applications in which signals need to be handled quickly and precisely.
FDFS2P103 operates on the principle of electrostatic conduction, which is the movement of charge carriers between the gate and the source and the drain. The application of the gate voltage causes a vertical electric field at the interface between the gate and the channel. As the field strength increases, the resistance between the source and the drain decreases and vice versa. This process is known as the "effect". By adjusting the gate voltage, it is possible to precisely control the current flowing between the source and the drain and hence the signal current.
FDFS2P103 is widely used in electronic applications. It is used in power supplies, logic circuits, process control, signal processing, microprocessor-based systems and memory circuits. It is particularly suitable for switching and analog operations. One of the major advantages of using FDFS2P103 is the low input capacitance and the low power consumption. The low input capacitance results in low thermal noise generation and its low power consumption ensures high performance in power sensitive applications.
FDFS2P103 is also ideal for applications that require precise signal handling. Its low input capacitance and high switching speed make it suitable for high-speed signal switching and analogue signal processing. Its high input impedance also enhances the signal-to-noise ratio of the signals it handles. Additionally, its low total harmonic distortion makes it an ideal choice for applications such as audio and video signal processing.
The FDFS2P103 is an ideal choice for applications such as logic circuits, memory circuits, process controllers and audio/video signal processors. This type of field effect transistor operates with a single supply, providing efficient power and compact size. The low thermal noise generation, low input current and low power consumption of the FDFS2P103 make it suitable for many applications. It is also suitable for high-speed digital signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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