FDFS2P753Z

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	455pF @ 10V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	9.3nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	115 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:
FDFS2P753Z is a vertical Delta-type field-effect transistor (FET), which is specifically designed for high-power applications. It is specifically designed to provide reliable, high current density operation. This type of transistor is commonly used in power circuits, switching regulators, motor control and lighting control systems. In addition, it is also widely used in telecommunications, industrial motor control, and power drive applications. It is available in standard mounting configurations and offers easy installation.Application Field:
FDFS2P753Z transistors are widely used in many industry and consumer applications. They are commonly used in power circuits, switching regulators, motor control and lighting control systems. In the automotive industry, they are used in automotive lighting dimmers, speed regulator, current sensors, power regulator, and Automated Machines, etc. In telecommunications, they are used for signal reception, antenna switches, multiplexing equipment, etc. In industrial applications, they are used to control motors, power drives, automation systems and robotics.Technology:
FDFS2P753Z is a four-pin vertical Delta-type FET with 25A/75V maximum current rating. Its four pins are drain, gate, source and ground (the fourth pin is an optional connection). The pinout allows the device to be easily mounted on standard circuitry boards. It features an enhanced input/output impedance and low on-state resistance. It is thermal and mechanically stable and the on-state impedance is well matched over the entire operating temperature range.The device features a large power-dissipation rating and it is capable of high-speed switching with low power loss. It also has low gate-to-source capacitance, which enables it to maintain high frequency performance. The device includes an integral drain-to-source protection diode and it is integrated with a voltage regulator for improved noise immunity.Working Principle:
The working principle of FDFS2P753Z is based on its FET characteristics, which consist of three regions – source, gate and drain. The source and drain regions of the device are connected to an external power source. The gate connection is the control point of the device and the applied voltage determines the operation of the device. When a positive voltage is applied to the gate of the device, a conductive region is created between the source and the drain, allowing current to flow from the source to the drain. This is known as the “on” state. When the voltage is removed from the gate, the conductive region disappears, thus preventing current from flowing from the source to the drain. This is known as the “off” state. In both states, the drain-to-source resistance (RDSON) is very low and the device is capable of handling high current loads. Conclusion:
FDFS2P753Z is a vertical Delta-type FET that is designed for high-power applications. It is capable of switching high currents with low power loss and low gate-to-source capacitance. It includes an integral drain-to-source protection diode and it features enhanced input/output impedance. It is available in standard mounting configurations and it is suitable for a variety of applications, including automotive, telecommunications and industrial applications. The device\'s working principle is based on its FET characteristics and it can be easily controlled via the application of a voltage to its gate connection.

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