FDFS6N303 Allicdata Electronics

FDFS6N303 Discrete Semiconductor Products

Allicdata Part #:

FDFS6N303TR-ND

Manufacturer Part#:

FDFS6N303

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 6A 8-SOIC
More Detail: N-Channel 30V 6A (Ta) 900mW (Ta) Surface Mount 8-S...
DataSheet: FDFS6N303 datasheetFDFS6N303 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 900mW (Ta)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

The FDFS6N303 is a N-Channel Enhancement Mode Power Field-Effect Transistor (FET), manufactured by Fairchild Semiconductor. This FET is specifically designed to drive high-current loads with low on-state resistance, making it an ideal choice for LCD displays, lighting applications, and motor drive circuits. In this article, we will look at the application field and working principles of the FDFS6N303.

Application Field

The FDFS6N303 is a power FET optimized for LCD and LED displays, LED lighting, and motor control applications. It has a drain current rating of 24A, and a maximum drain-source voltage rating of 30V. Its low on-state resistance and fast switching speed make it ideal for high-current applications. It is also featured in Fairchild\'s family of PowerTrench MOSFETs, which are optimized for use in lighting and motor drive circuits.

The FDFS6N303 can be used in a variety of applications including line regulation, LCDs, LED lighting, motor control, and other applications that require low on-state resistance and fast switching. It is also rated for a high-temperature operation, making it suitable for use in harsh environments.

Working Principle

The FDFS6N303 is a power FET that operates in the enhancement mode. When the gate voltage is zero volts, the device is off and there is no conduction between the drain and source. When the gate voltage is increased, the channel between the drain and source turns on and current can flow. The amount of current that flows is determined by the voltage applied to the gate and the impedance of the load.

The FDFS6N303 has a low on-state resistance, which is the resistance measured when the device is fully turned on. This low resistance translates to a lower power dissipation and increased efficiency so that more power can be delivered to the load. The FDFS6N303 also has a fast switching speed, which means it can be used in high-frequency applications.

Conclusion

The FDFS6N303 is an N-Channel Enhancement Mode Power FET specifically designed for LCD displays, lighting applications, and motor drive circuits. It has a drain current rating of 24A, and a maximum drain-source voltage rating of 30V. Its low on-state resistance and fast switching speed make it an excellent choice for high-current applications.

The specific data is subject to PDF, and the above content is for reference

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