| Allicdata Part #: | FDP20AN06A0-ND |
| Manufacturer Part#: |
FDP20AN06A0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 45A TO-220AB |
| More Detail: | N-Channel 60V 9A (Ta), 45A (Tc) 90W (Tc) Through H... |
| DataSheet: |  FDP20AN06A0 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 90W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 45A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 45A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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FDP20AN06A0 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It is a type of field-effect transistor that uses metal–oxide–semiconductor (MOS) technology to control current flow. It consists of two terminals, a source and a drain, and two gate electrodes, one on each side of the MOSFET channe.
The FDP20AN06A0 has a low on-resistance of 20 mΩ, peak current of 30 A and continuous drain current of 9.3 A. It is designed for high switching speeds and high efficiency. It is in the form of a TO-220AB package, making it easy to install and mount.
FDP20AN06A0 is widely used in applications such as power supplies, automotive power solutions, robotics, medical equipment, hard drives and consumer electronics. It is suitable for both DC and AC applications. It is also used in power management circuits and voltage regulators.
The working principle of the FDP20AN06A0 is based on the field-effect transistor. It utilizes an electric field formed at the interface between n-type (negative-type) and p-type (positive-type) semiconductors to control current flow. A potential difference is applied to the gate electrode, producing an electric field that modulates the conductivity of the channel between the source and the drain. As a result, the current through the channel is controlled by the gate voltage.
The FDP20AN06A0 is a fast-switching, low-voltage MOSFET with a maximum voltage of 30 V and a maximum switching speed of 500 kHz. It is the ideal choice for applications that require high efficiency and low power loss. It can be used in a wide variety of applications, providing excellent performance and reliability.
In conclusion, FDP20AN06A0 is a MOSFET that is widely used in applications such as power supplies, automotive power solutions, robotics, medical equipment, and consumer electronics. It has a low on-resistance of 20 mΩ, peak current of 30A, and continuous drain current of 9.3 A. It features high switching speed and efficiency. The working principle of the FDP20AN06A0 is based on the field-effect transistor, where an electric field is used to modulate the conductivity of the channel between the source and drain.
The specific data is subject to PDF, and the above content is for reference
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