| Allicdata Part #: | FDP2710-ND |
| Manufacturer Part#: |
FDP2710 |
| Price: | $ 3.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 50A TO-220 |
| More Detail: | N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-... |
| DataSheet: | FDP2710 Datasheet/PDF |
| Quantity: | 725 |
| 1 +: | $ 3.02000 |
| 10 +: | $ 2.92940 |
| 100 +: | $ 2.86900 |
| 1000 +: | $ 2.80860 |
| 10000 +: | $ 2.71800 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 260W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7280pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 101nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 42.5 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDP2710 is a single, field-effect transistor (FET) device that is an increasingly popular choice for a variety of applications and projects. The FDP2710 provides low on-resistance, low gate and source threshold voltage (VGS and VDS), low gate and drain capacitance, and high drain side tolerance. The principle and application of a FDP2710 will be discussed in the following sections.
Working Principle of FDP2710
The FDP2710 is a FET device in which a gate electrode controls the flow of charge carriers, either electrons or holes, between source and drain regions. It works with high temperature operation, saturated output drain characteristics and operating temperature range over -55C to +150C. When a voltage is applied to the gate electrode, an electric field is created, creating a conductive channel between the source and drain. The gate electrode is typically insulated from the conducting channel by the gate oxide. This type of device is referred to as an insulated gate field-effect transistor (IGFET).
The FDP2710 utilizes an additional internal power-MOSFET layer for improved reliability, enhanced dynamic turn-on speed, and impedance matching between the source and drain regions. In addition, the FDP2710 can be operated over a wide input voltage range—from 4.5V to 24V DC.
FDP2710 Applications
The FDP2710 is a versatile device with a range of applications in both digital and linear electronics. One of its most common applications is as an RF switch, since it can switch signals from low frequencies up to 8GHz. In addition, it can be used as a variable resistor for high-speed switching. It is also a great choice for controlling the output current of motor circuits.
Other common applications of the FDP2710 include voltage regulator applications, DC-DC converter applications, and power supply designs. The FDP2710 can also be used as a load switch in Class-D audio amplifier designs, allowing users to switch between different channels quickly and accurately. In terms of linear applications, the FDP2710 can be used to control the current flow in analog circuits, providing excellent linearity and low output noise.
Conclusion
The FDP2710 is a versatile, single, field-effect transistor device that is gaining popularity in a range of applications and projects. Its low on-resistance, low gate and source threshold voltage, low gate and drain capacitance, and high drain side tolerance make it an excellent choice for both digital and linear electronics designs. Its wide input voltage range and fast switching speed also make it an attractive choice for RF, motor, and Class-D audio amplifier applications. As the demand for higher-performance electronics grows, the FDP2710 is likely to become an even more popular choice.
The specific data is subject to PDF, and the above content is for reference
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FDP2710 Datasheet/PDF