FDP2710 Allicdata Electronics
Allicdata Part #:

FDP2710-ND

Manufacturer Part#:

FDP2710

Price: $ 3.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 250V 50A TO-220
More Detail: N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-...
DataSheet: FDP2710 datasheetFDP2710 Datasheet/PDF
Quantity: 725
1 +: $ 3.02000
10 +: $ 2.92940
100 +: $ 2.86900
1000 +: $ 2.80860
10000 +: $ 2.71800
Stock 725Can Ship Immediately
$ 3.02
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 260W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDP2710 is a single, field-effect transistor (FET) device that is an increasingly popular choice for a variety of applications and projects. The FDP2710 provides low on-resistance, low gate and source threshold voltage (VGS and VDS), low gate and drain capacitance, and high drain side tolerance. The principle and application of a FDP2710 will be discussed in the following sections.

Working Principle of FDP2710

The FDP2710 is a FET device in which a gate electrode controls the flow of charge carriers, either electrons or holes, between source and drain regions. It works with high temperature operation, saturated output drain characteristics and operating temperature range over -55C to +150C. When a voltage is applied to the gate electrode, an electric field is created, creating a conductive channel between the source and drain. The gate electrode is typically insulated from the conducting channel by the gate oxide. This type of device is referred to as an insulated gate field-effect transistor (IGFET).

The FDP2710 utilizes an additional internal power-MOSFET layer for improved reliability, enhanced dynamic turn-on speed, and impedance matching between the source and drain regions. In addition, the FDP2710 can be operated over a wide input voltage range—from 4.5V to 24V DC.

FDP2710 Applications

The FDP2710 is a versatile device with a range of applications in both digital and linear electronics. One of its most common applications is as an RF switch, since it can switch signals from low frequencies up to 8GHz. In addition, it can be used as a variable resistor for high-speed switching. It is also a great choice for controlling the output current of motor circuits.

Other common applications of the FDP2710 include voltage regulator applications, DC-DC converter applications, and power supply designs. The FDP2710 can also be used as a load switch in Class-D audio amplifier designs, allowing users to switch between different channels quickly and accurately. In terms of linear applications, the FDP2710 can be used to control the current flow in analog circuits, providing excellent linearity and low output noise.

Conclusion

The FDP2710 is a versatile, single, field-effect transistor device that is gaining popularity in a range of applications and projects. Its low on-resistance, low gate and source threshold voltage, low gate and drain capacitance, and high drain side tolerance make it an excellent choice for both digital and linear electronics designs. Its wide input voltage range and fast switching speed also make it an attractive choice for RF, motor, and Class-D audio amplifier applications. As the demand for higher-performance electronics grows, the FDP2710 is likely to become an even more popular choice.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDP2" Included word is 17
Part Number Manufacturer Price Quantity Description
FDP2614 ON Semicondu... -- 1835 MOSFET N-CH 200V 62A TO-2...
FDP2552 ON Semicondu... -- 586 MOSFET N-CH 150V 37A TO-2...
FDP2670 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 19A TO-2...
E3Z-FDP27 Omron Automa... 59.38 $ 19 SENSOR DIFFUSED RED PNP M...
FDP2570 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 150V 22A TO-2...
FDP22N50N ON Semicondu... -- 3015 MOSFET N-CH 500V 22A TO-2...
FDP20N50 ON Semicondu... -- 10329 MOSFET N-CH 500V 20A TO-2...
FDP24N40 ON Semicondu... -- 1054 MOSFET N-CH 400V 24A TO-2...
FDP2532 ON Semicondu... -- 182 MOSFET N-CH 150V 79A TO-2...
FDP2710-F085 ON Semicondu... 2.93 $ 2316 MOSFET N-CH 250V 4A TO-22...
FDP2D3N10C ON Semicondu... -- 1000 MOSFET N-CH 100V 222A TO2...
FDP2572 ON Semicondu... -- 588 MOSFET N-CH 150V 29A TO-2...
FDP2710 ON Semicondu... -- 725 MOSFET N-CH 250V 50A TO-2...
FDP26N40 ON Semicondu... -- 2568 MOSFET N-CH 400V 26A TO-2...
FDP20N50F ON Semicondu... -- 839 MOSFET N-CH 500V 20A TO-2...
FDP24AN06LA0 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 40A TO-22...
FDP20AN06A0 ON Semicondu... -- 1000 MOSFET N-CH 60V 45A TO-22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics