FDP20N50 Allicdata Electronics
Allicdata Part #:

FDP20N50-ND

Manufacturer Part#:

FDP20N50

Price: $ 2.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 20A TO-220
More Detail: N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: FDP20N50 datasheetFDP20N50 Datasheet/PDF
Quantity: 10329
1 +: $ 2.35000
10 +: $ 2.27950
100 +: $ 2.23250
1000 +: $ 2.18550
10000 +: $ 2.11500
Stock 10329Can Ship Immediately
$ 2.35
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 59.5nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FDP20N50 is a metal oxide semiconductor field-effect transistor (MOSFET). It was designed to provide high current carrying capacity while remaining relatively small in size and low in cost. The transistor was first introduced in the early 1990s and has become a popular choice for power switching applications in a variety of systems.

The FDP20N50 is a n-channel MOSFET, which means that its channel is doped with donor atoms and has electrons available for the current conduction. The transistor has an insulated gate that drives the current between the source and the drain by controlling the number of electrons that can pass through its channel. When a positive gate-source voltage is applied, electrons in the channel are repelled from the gate and the source-drain voltage is allowed to be turned on. When the applied voltage is returned to a negative level, electrons are reattracted to the gate and the voltage is turned off again.

The FDP20N50 is available in both a through-hole package and a surface-mount device, allowing it to be used in a wide range of applications. It features a low on-resistance of 20 milliohms and a current carrying capacity of 50 amps, making it well suited for applications that require high current flow. The transistor also features temperature protection circuitry, which prevents it from operating at temperatures that would cause it to be damaged.

The FDP20N50 can be used for a variety of applications, including motor and amplifier control, robotics, power switching, and switching in systems that require a high amount of current. In these applications, the transistor can be used in parallel or in a series configuration to increase the current carrying capacity or to protect the circuit from high voltages. It can also be used as an input and output stage for amplifiers and power supplies, allowing them to operate at higher currents than is possible with a single transistor.

The FDP20N50 is a reliable and versatile MOSFET, providing high current flow, low on-resistance, and temperature protection circuitry. Its wide range of applications and easy to use features make it an ideal choice for controlling power in a variety of systems. Its availability in both a through-hole package and a surface-mount device makes it versatile enough to be used in virtually any application.

The specific data is subject to PDF, and the above content is for reference

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