FDP2D3N10C

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FDP2D3N10C is a field-effect transistor (FET) based device designed for applications such as power amplifier stages, audio preamplifiers, and RF amplifiers.

FDP2D3N10C is a single FET device with a drain-source voltage VDS of 10 volts, a gate-source voltage VGS of -2Volts and a drain current of 45mA. This device also has a very low threshold voltage of -2V. The device has a low dynamic resistance of 0.5ohm, a fast switching capability, and an excellent saturation current handling capacity of up to 75mA.

The FDP2D3N10C is an enhancement mode FET device. This means that when the gate-source voltage is negative with respect to the source, the device will be in its off state. When the gate voltage is positive with respect to the source, the device will turn on.

The operating principle of the FDP2D3N10C is quite simple. When the gate voltage is negative, the transistor is in its off state, and the current through the device is zero. When the gate voltage is increased to a positive potential, the device turns on and the current through the device increases. The drain-to-source voltage (VDS) determines how much current can flow. As the VDS increases, the current will increase. When the VDS reaches the threshold voltage, the device is said to be in saturation, and the current is at its maximum.

The FDP2D3N10C can be used in a wide range of applications including overload protection, RF switch, and audio preamp stages. It has a low gate threshold voltage which makes it suitable for high input impedance circuits. The device can also be used as a low-power logic device, where low-level logic signals can be detected by the FDP2D3N10C.

In addition to the aforementioned applications, the FDP2D3N10C can also be used in RF amplifiers and switch applications. The low gate threshold voltage of the device makes it suitable for these applications. The device also has a fast switching capability, allowing it to quickly switch between the on and off states. This makes it an ideal device for switching between multiple RF signals.

In conclusion, the FDP2D3N10C is a single FET device with a low threshold voltage and an excellent saturation current handling capacity. This makes it ideal for a wide range of applications including low-level logic signals, overload protection, RF switch, and audio preamp stages. The device also has a fast switching capability, making it suitable for RF amplifiers and switch applications.

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