| Allicdata Part #: | FDP2614FS-ND |
| Manufacturer Part#: |
FDP2614 |
| Price: | $ 2.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 62A TO-220 |
| More Detail: | N-Channel 200V 62A (Tc) 260W (Tc) Through Hole TO-... |
| DataSheet: | FDP2614 Datasheet/PDF |
| Quantity: | 1835 |
| 1 +: | $ 2.56000 |
| 10 +: | $ 2.48320 |
| 100 +: | $ 2.43200 |
| 1000 +: | $ 2.38080 |
| 10000 +: | $ 2.30400 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 260W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7230pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 99nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 31A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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FDP2614 is a transistor that belongs to the single FETs and MOSFETs family. It is commonly used as a switch or amplifier, depending on the application. It is also used to control and regulate current flow, voltage levels and power flow.
What is FDP2614?
FDP2614 is a field effect transistor, usually labeled as JFET (junction field-effect transistor). It is a three-terminal device having a source, gate, and drain. It is a kind of unipolar transistor because it has only one type of charge carriers, electrons. It is a voltage-controlled device, where the current is proportional to the voltage applied on the gate terminal.
Working Principle of FDP2614
FDP2614 transistor works on the principle of “Junction Field Effect” or “Depletion Mode Operation”. For operation, a reverse bias voltage is applied to the gate-source junction, and a certain amount of current flows through the transistor, resulting in a controlled conductance (gm) between drain and source terminals.
Structure of FDP2614
The FDP2614 transistor is made of silicon wafer or P-type metal oxide semiconductor (MOS). It consists of two n-type channels, i.e., source and drain, separated by a gate oxide layer.
In this configuration, when the applied volts is greater than the junction threshold voltage (VT), the depletion regions expand unless an acceptable gate potential is applied. This reduces the gap between drain and source and thus increases the current flow through the transistor.
Use of FDP2614
The FDP2614 transistor is mainly used in audio circuits as an amplifier or a switch to route signals from one component to another. It is also used as current regulators, energy monitors, and audio controllers. FET transistors can also be used as power regulators; in power ICs, to determine the threshold of a load, and for voltage divider circuits.
FDP2614 transistors are also used in automatic temperature controllers, microprocessor-based
The specific data is subject to PDF, and the above content is for reference
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FDP2614 Datasheet/PDF