
Allicdata Part #: | FDP24AN06LA0-ND |
Manufacturer Part#: |
FDP24AN06LA0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 40A TO-220AB |
More Detail: | N-Channel 60V 7.8A (Ta), 40A (Tc) 75W (Tc) Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FDP24AN06LA0 is a device from Fairchild Semiconductor in the N-channel MOSFET family. FDP24AN06LA0 is a highly efficient, low voltage, single P-channel MOSFET designed on a relatively low threshold technology. This widely used low threshold MOSFET can sustain a considerable load current with proper Gate drive.
In terms of application fields, the FDP24AN06LA0 is suitable for a wide range of applications ranging from automotive, medical, consumer electronics, industrial, home appliances and communication. For example, the FDP24AN06LA0 can be used as a DC to DC step up or step down voltage converter, a power amplifier and a mobile battery charger. In addition, it can also be used in a wide range of applications within the automotive industry such as voltage regulators for car batteries, line converters for power management, and as well as electronic power steering and active suspension components.
The working principle of FDP24AN06LA0 is based on a voltage-controlled MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It consists of a Gate, a Drain and a Source which are all connected by three pins, respectively. The Gate is the input terminal and the Drain and the Source are the output terminals. By adjusting the voltage applied to the Gate, the conduction of the Drain-to-Source current can be adjusted accordingly. In essence, the Gate voltage adjusts the resistance between the Drain and the Source, thus allowing current to flow through the two terminals while blocking current at the same time.
When the Gate voltage is low, the FDP24AN06LA0 FET works as an open circuit and no current can flow. When the Gate voltage is increased, the current conduction is raised and the resistance between the Drain and Source is increased. By controlling the Gate voltage, the MOSFET can work as a switch and control the current flow between the two terminals. When the Gate voltage is zero, the device will remain in its current condition. As the Gate voltage reaches a certain level, the device will change to the opposite state and will remain in this state until the voltage returns to zero.
The main principle of FDP24AN06LA0 is to control the current flow by adjusting the Gate voltage. In addition, the device is highly efficient and can achieve a lower threshold voltage. This is due to the relatively simple structure of the device, the low voltage operation and the low voltage threshold so the device can work effectively.
Overall, the FDP24AN06LA0 is a highly efficient, single P-channel MOSFET that can sustain a considerable load current with proper Gate drive. Low-threshold MOSFETs like FDP24AN06LA0 are suitable for a wide range of applications ranging from automotive, medical, consumer electronics, industrial, home appliances and communications. With a relatively simple structure and high reliability, FDP24AN06LA0 is one of the most popular MOSFETs used in today\'s market.
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