| Allicdata Part #: | FDP51N25-ND |
| Manufacturer Part#: |
FDP51N25 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 250V 51A TO-220 |
| More Detail: | N-Channel 250V 51A (Tc) 320W (Tc) Through Hole TO-... |
| DataSheet: |  FDP51N25 Datasheet/PDF |
| Quantity: | 3894 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 320W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3410pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 25.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 51A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FDP51N25 is a single N-channel enhancement-mode Field Effect Transistor (FET) from Advanced Power Technology. This transistor features a low RDS(ON) and a steep gate charge which makes it suitable for a wide range of applications.
The FDP51N25 has an N-channel design built with a TrenchFET process, which has benefits for efficiency and size compared to other FETs. It is optimized for low-side switching in high- frequency, high-current and low voltage applications. The FDP51N25 also offers superior thermal capability, making it suitable for a range of power supply and automotive applications.
The FDP51N25 is available in a TO-220 or a thermally enhanced surface-mount package. It has a maximum drain voltage of 25 Volts and a maximum drain current of 1 Amp. An additional feature of this FET is a source-drain diode that can be used to protect the device from excessive current.
The FDP51N25 is designed to work in high-frequency applications. Its gate charge is optimized for fast switching, enabling fast transition times. Additionally, its low RDS(ON) reduces losses and enables more efficient operation. The combination of features makes the FDP51N25 ideal for high-frequency switching applications.
The FDP51N25 is suited for a range of applications, including AC/DC adapters, power supplies, motor control, and other power strategies. It can also be used in automotive electronics applications such as control circuitry for fuel injection systems and starter motors. Other applications include switching power amplifiers, low-noise audio amplifiers and signal processing circuits.
The FDP51N25 is a useful tool in enabling a variety of functions. Its N-channel design allows it to operate in enhancement mode, which means it is not switching the entire signal, but just amplifying the current flow. This enables it to preform a range of tasks depending on its configuration and application. Depending on its configuration, the FDP51N25 can be used as a high-current switch, low-noise amplifier, low-voltage regulator, or a signal processing element. It can also be used to supply drive current to other active FETs, enabling a higher current capacity than normal.
The FDP51N25 is a versatile single-channel N-channel enhancement-mode FET that offers superior performance for a range of power supply and automotive applications. Its low RDS(ON) enables fast switching and higher efficiency. The device is available in packages that provide thermal protection and a source-drain diode for protection against excessive current. The FDP51N25 is an excellent choice for a wide range of high-frequency and high-current applications.
The specific data is subject to PDF, and the above content is for reference
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