FDP52N20

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	357W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	UniFET™
Rds On (Max) @ Id, Vgs:	49 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FDP52N20 Application Field and Working Principle

The FDP52N20 is a vertical double-diffused MOSFET (DMOS) transistor that can deliver reliable operation for a wide range of applications. It is a robust, rugged and highly reliable transistor providing high speed switching and excellent gain characteristics with ultra-low input capacitance. The FDP52N20 is able to deliver superior processing performance and productivity in a variety of increasingly demanding applications.The FDP52N20 is implemented in a wide range of projects, ranging from consumer electronics, automotive, industrial and healthcare to emerging technologies such as wearables, robotics, and autonomous systems. It is designed to support a wide range of data-intensive workloads including gaming, high-speed digital signal processing, and multimedia applications. This makes it ideal for a wide range of applications that demand robust semiconductor solutions with high data-processing speeds.The FDP52N20 incorporates a vertical double-diffused MOSFET (DMOS) transistor with ultra-low input capacitance, high speed switching and excellent gain characteristics. A DMOS transistor is a three-terminal semiconductor device consisting of a metal oxide semiconductor field effect transistor (MOSFET) where the source and drain are connected to the same region. It is highly reliable and capable of producing high frequencies.The FDP52N20 has a source-drain breakdown voltage (Vds) of 20V, drain current (Id) of 10A, and gate charging current (Ig) of 1mA. Its gate-source threshold voltage (Vgs) is 2.0V and the drain-source on-resistance (Rds) is 0.46 ohms. It is designed to operate between -40C and +125C and is ideal for use in high temperature environments.The FDP52N20 operates in a single-depletion mode of operation, which means that the channel between the source and drain pins will be fully depleted of free electrons once a certain voltage is applied to the gate. This allows the transistor to operate in an on-off switching mode, which is ideal for digital circuits.The FDP52N20 is typically used in low voltage, high current applications such as motor control, high voltage switching and power conversion. It is also suitable for use in high efficiency power management systems where low on-resistance and fast switching times are essential.In summary, the FDP52N20 is a highly reliable, rugged and versatile transistor with excellent gain and speed characteristics. Its vertical DMOS architecture and low input capacitance make it an ideal choice for a wide range of demanding applications, including consumer electronics, automotive, industrial and healthcare. The FDP52N20 is also able to deliver robust performance in data-intensive workloads, making it suitable for emerging technologies such as wearables, robotics, and autonomous systems.

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