FDP5680 Allicdata Electronics
Allicdata Part #:

FDP5680-ND

Manufacturer Part#:

FDP5680

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 40A TO-220
More Detail: N-Channel 60V 40A (Tc) 65W (Tc) Through Hole TO-22...
DataSheet: FDP5680 datasheetFDP5680 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: PowerTrench®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
FET Feature: --
Power Dissipation (Max): 65W (Tc)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Description

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 FDP5680 is a dual N-channel enhancement mode PowerMOSFET, designed for high current and low voltage applications such as Battery Chargers, DC-DC converters, Automotive, Automotive Lighting and Motor Control. The FDP5680 has been specifically designed to meet the thickness requirements of a replacement MOSFET in car audio amplifiers. It is available in a through-hole TO-220 package.

In general, the FDP5680 has a number of features, including low package inductance, fast body diode, and low on-resistance. It is able to handle a continuous current of 6A and 100A peak, while its drain-to-source breakdown voltage (BVDSS) is 600V, which is an important consideration when used in a power-amplification system. The FDP5680 also has a low gate charge, which makes it suitable for use in pulse-width-modulated (PWM) switching applications. Moreover, the FDP5680 has a maximum gate-to-source voltage (VGS) of ±20V, which greatly improves the reliability of the device when handling large signal swings.

The FDP5680 is often used in magnetics applications, such as relays, motor controls, and power management. It is also well suited for automotive lighting, in-car audio systems, motor speed control, and power supplies. The FDP5680 is able to handle high voltage and current, while its low gate charge makes it ideal for Pulse-Width Modulated (PWM) switching applications.

The FDP5680 is an N-channel enhancement mode PowerMOSFET that works on the principle of voltage transfer. In this type of device, a gate voltage is used to raise the threshold voltage of the transistor, allowing current to flow through it. The gate voltage must be positive in order to turn the device on and negative to turn it off. The drain-to-source voltage (VDS) controls the current through the device, as the device will start to conduct as soon as VDS reaches the threshold voltage. As a result, the current can be varied depending on the voltage applied to the gate.

The FDP5680 is a versatile MOSFET that is used for a variety of applications. Its low package inductance, fast body diode, low-on resistance, and ±20V maximum gate-to-source voltage make it an ideal choice for a variety of high current and low voltage applications. In motor control, the FDP5680 can be used to drive a motor due to its fast switching times. It is also suitable for use in power management and automotive lighting applications. Its maximum drain-to-source breakdown voltage (BVDSS) of 600V makes it a reliable option when used in power-amplification systems.

The specific data is subject to PDF, and the above content is for reference

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