FDP5690 Allicdata Electronics
Allicdata Part #:

FDP5690-ND

Manufacturer Part#:

FDP5690

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A TO-220
More Detail: N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-22...
DataSheet: FDP5690 datasheetFDP5690 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power Dissipation (Max): 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDP5690 Application Field and Working Principle

FDP5690 is a premium planar N-channel MOSFET. Utilizing advanced process technologies and superior packaging technologies, this device has excellent high-voltage performance, low gate charge, and low on-state resistance.

Application Field

In the application field, FDP5690 is suitable for a large range of power applications, such as servers and switching power supplies, as well as other applications that need to ensure high accuracy and fast operation speed. It is suitable for half-bridge topology and other topologies, such as forward converters and resonant converters, to provide excellent high-voltage switching performance.

FDP5690 is also suitable for plug-in chargers and power adapters due to its low gate charge and low on-state resistance. In some applications that require regulation and control, this MOSFET is combined with high-speed logic circuits, analog electronic control and optoelectronics, to form a power supply system.

Working Principle

The working principle of FDP5690 is based on the basic operating principle of the MOSFET, which has been modified to achieve the fast switching and high performance of the device. A semiconductor material, usually made of Silicon or Germanium, is used for the construction of the device. This material is specially prepared with a very thin layer of oxide between the source and drain regions.

The oxide layer is divided into three conductive regions and two non-conductive regions. When a positive gate voltage is applied to the MOSFET, it creates an electric field inside the oxide layer, which causes the holes to move from the two non-conductive regions to the two conductive regions and forms a channel between the source and the drain regions. This channel allows current to flow through the device and produces the desired switching action.

When the gate voltage drops below a certain level, the channel is switched off, preventing the flow of current through the device. Because the channel is switched on and off very quickly, FDP5690 has an excellent switching speed and can switch up to 20MHz in a fraction of a microsecond.

FDP5690 also has excellent thermal performance, which means that it has high voltage blocking and low operating temperatures, allowing it to be used in applications requiring high power handling capabilities. In addition, its high frequency performance makes it ideal for high-speed switching applications.

The fact that FDP5690 is a planar device means that it has a small footprint and can easily be mounted on a PCB. It also has a low gate charge, which makes it easy to control the switching speed. And since the device has a low on-state resistance, it can be used for applications that require low power consumption.

Overall, FDP5690 is an excellent choice for a wide range of power applications, as it provides excellent high voltage performance, fast switching speed, high efficiency, and excellent thermal performance.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDP5" Included word is 12
Part Number Manufacturer Price Quantity Description
FDP5N50 ON Semicondu... -- 1000 MOSFET N-CH 500V 5A TO-22...
FDP5680 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 40A TO-22...
FDP5800 ON Semicondu... -- 912 MOSFET N-CH 60V 14A TO-22...
FDP5500 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 55V 80A TO-22...
FDP5645 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 80A TO-22...
FDP5690 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 60V 32A TO-22...
FDP5500-F085 ON Semicondu... -- 175 MOSFET N-CH 55V 80A TO-22...
FDP5N60NZ ON Semicondu... -- 620 MOSFET N-CH 600V 4.5A TO-...
FDP52N20 ON Semicondu... -- 1840 MOSFET N-CH 200V 52A TO-2...
FDP55N06 ON Semicondu... -- 3190 MOSFET N-CH 60V 55A TO-22...
FDP5N50NZ ON Semicondu... -- 2896 MOSFET N-CH 500V 4.5A TO2...
FDP51N25 ON Semicondu... -- 3894 MOSFET N-CH 250V 51A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics