Allicdata Part #: | FDP5690-ND |
Manufacturer Part#: |
FDP5690 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 32A TO-220 |
More Detail: | N-Channel 60V 32A (Tc) 58W (Tc) Through Hole TO-22... |
DataSheet: | FDP5690 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1120pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FDP5690 Application Field and Working Principle
FDP5690 is a premium planar N-channel MOSFET. Utilizing advanced process technologies and superior packaging technologies, this device has excellent high-voltage performance, low gate charge, and low on-state resistance.
Application Field
In the application field, FDP5690 is suitable for a large range of power applications, such as servers and switching power supplies, as well as other applications that need to ensure high accuracy and fast operation speed. It is suitable for half-bridge topology and other topologies, such as forward converters and resonant converters, to provide excellent high-voltage switching performance.
FDP5690 is also suitable for plug-in chargers and power adapters due to its low gate charge and low on-state resistance. In some applications that require regulation and control, this MOSFET is combined with high-speed logic circuits, analog electronic control and optoelectronics, to form a power supply system.
Working Principle
The working principle of FDP5690 is based on the basic operating principle of the MOSFET, which has been modified to achieve the fast switching and high performance of the device. A semiconductor material, usually made of Silicon or Germanium, is used for the construction of the device. This material is specially prepared with a very thin layer of oxide between the source and drain regions.
The oxide layer is divided into three conductive regions and two non-conductive regions. When a positive gate voltage is applied to the MOSFET, it creates an electric field inside the oxide layer, which causes the holes to move from the two non-conductive regions to the two conductive regions and forms a channel between the source and the drain regions. This channel allows current to flow through the device and produces the desired switching action.
When the gate voltage drops below a certain level, the channel is switched off, preventing the flow of current through the device. Because the channel is switched on and off very quickly, FDP5690 has an excellent switching speed and can switch up to 20MHz in a fraction of a microsecond.
FDP5690 also has excellent thermal performance, which means that it has high voltage blocking and low operating temperatures, allowing it to be used in applications requiring high power handling capabilities. In addition, its high frequency performance makes it ideal for high-speed switching applications.
The fact that FDP5690 is a planar device means that it has a small footprint and can easily be mounted on a PCB. It also has a low gate charge, which makes it easy to control the switching speed. And since the device has a low on-state resistance, it can be used for applications that require low power consumption.
Overall, FDP5690 is an excellent choice for a wide range of power applications, as it provides excellent high voltage performance, fast switching speed, high efficiency, and excellent thermal performance.
The specific data is subject to PDF, and the above content is for reference
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