Allicdata Part #: | FDP5500-ND |
Manufacturer Part#: |
FDP5500 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 80A TO-220AB |
More Detail: | N-Channel 55V 80A (Tc) 375W (Tc) Through Hole TO-2... |
DataSheet: | FDP5500 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3565pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 269nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FDP5500 is a new-generation power MOSFET developed by Fairchild Semiconductor Corporation. It is widely applied in various power management applications, especially in those when high-current switching and high-speed switching tansitions are required. This MOSFET is able to provide the needed performance for relatively low power loads and switching frequencies.
The FDP5500 comes with several unique features that make it attractive for multiple applications. For example, it operates with a very low gate-source voltage drop, which ensures greater efficiency when controlling a large amount of current. In addition, its greater switching speed allows for faster switching transitions with lower device heating. Furthermore, its relatively small size allows the device to fit in tight applications where space is at a premium.
The application field of the FDP5500 is quite broad. It is widely used in power supply controllers and converters, power tools, lighting control systems, and battery chargers, as well as in many other switching applications. Its ability to switch on and off very quickly also makes it useful in high-speed feedback techniques and in high-speed switching circuits.
The FDP5500’s working principle is based on the operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). This circuit element is a voltage-controlled power switch that can be used to control currents. It is composed of three regions, the source, the drain, and the gate. The source and drain are separated by a conductive channel that is controlled by the gate. When a voltage is applied to the gate, the channel is opened, allowing electrical current to flow from the source to the drain.
The FDP5500 has some other features that make it attractive for many applications. It is an n-type MOSFET, which means that it switches on when the gate-source voltage is positive and switches off when the gate-source voltage is negative. This allows for precision control when managing large currents and for high-speed switching transitions. Furthermore, the FDP5500 also has a low internal capacitance, which allows for higher switching frequencies without the voltage overshoot or other unwanted effects.
The FDP5500 has become an important part of many power management applications, thanks to its unique capabilities and flexibility. From controlling large currents to providing fast switching transitions, the FDP5500 is an ideal choice for any application that requires precise power management.
The specific data is subject to PDF, and the above content is for reference
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