Allicdata Part #: | FDP5645-ND |
Manufacturer Part#: |
FDP5645 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 80A TO-220 |
More Detail: | N-Channel 60V 80A (Ta) 125W (Tc) Through Hole TO-2... |
DataSheet: | FDP5645 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4468pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FDP5645 is an N-Channel PowerTrench MOSFET specifically designed for Automotive and Hi-Reliability applications. It provides the designer with better breakdown voltage characteristics, faster switching speeds and a low on-resistance with low gate charge characteristics. The FDP5645 is an excellent choice as a load switch or level shifter in automotive and industrial applications.
The FDP5645 is a type of MOSFET, short for Metal-Oxide-Semiconductor Field-Effect Transistor. It is a type of static, voltage-controlled transistor that is used in power electronics circuits and switching applications. A MOSFET works by controlling the width of its conductive channel. When a voltage is applied across the gate and source terminals, it modulates the current flowing from the source to the drain, allowing the designer to effectively regulate power levels using only a low gate current.
The FDP5645\'s PowerTrench technology allows it to achieve superior performance in certain areas of application. This technology helps it to support better on-state resistance, low gate charge, and enhanced ruggedness. This makes it an ideal choice for applications such as battery chargers, LED lighting, DC-DC converters, and automotive electronics.
The FDP5645 also achieves superior capabilities due to its breakdown voltage rating of 240V, with a maximum drain-source breakdown voltage at 10V V. This helps to protect the circuit from interference and provides the designer with greater control over current levels. The FDP5645 is rated to handle current levels up to 17A and drain-source on-state resistance ranges from 55mΩ - 105mΩ.
The FDP5645’s working principle can be easily understood. When the gate receives a positive charge, the channel between the source and drain terminals becomes conductive and allows the current to flow in a controlled manner. When the gate voltage is decreased, the channel width decreases, allowing the transistor to switch off and stop the current flow. The speed of the switch depends on the amount of gate current applied, with faster switching possible when larger amounts of current are used.
In conclusion, the FDP5645 is an ideal power MOSFET for applications that require superior performance, speed and reliability. Its unique PowerTrench technology helps to provide better breakdown voltage and on-state resistance while its working principle allows for faster switching speeds and enhanced control over current levels. This makes it an ideal choice for applications such as automotive electronics, battery chargers, LED lighting and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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