Allicdata Part #: | FDPF14N30T-ND |
Manufacturer Part#: |
FDPF14N30T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 14A TO-220F |
More Detail: | N-Channel 300V 14A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | FDPF14N30T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UniFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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FDPF14N30T is a type of Field-Effect Transistor (FET), better known as a metal-oxide-semiconductor FET (MOSFET). It is a single-channel device that simply means that it only has one conducting channel, which is designed to give a low-voltage on/off control for a very high load current. The FDPF14N30T is a n-channel enhancement-mode silicon gate-controlled power FET, with the low-on-resistance for low on-current level and maximum operating temperature of 175°C.
The main applications for FDPF14N30T are power switching, DC motor control and pulse width modulation (PWM) applications. Due to its low gate threshold voltage, it is suitable for battery-operated applications. It is also capable of controlling current levels as low as 5mA, making it suitable for many contemporary high-output devices.
The working principle of FDPF14N30T is based on the principle of action of a standard MOSFET, which involves the use of a gate that controls the channel underneath for conduction. The channel of FDPF14N30T is formed by its body and drain, and gate potential is used to control the conduction of the channel.
The FDPF14N30T is energized when the gate voltage is greater than the threshold voltage. When this condition is met, the pin of the gate effectively repels majority carriers away from the drain and attracts minority carriers toward the drain, thus creating a conductive channel between the source and the drain. This generates a low impedance path between the source and the drain and current starts to flow, in turn enabling the circuit to be powered up.
When the FDPF14N30T is actually turned off, the gate voltage drops below the threshold and the current that was created is blocked. The gate reverse biases the channel and no current flows through the channel. This process is known as ‘pinch off’ and it indicates the device has been turned off. But the next time the device is required to be turned on again, the same process occurs - applying a voltage to the gate will again open the channel and current will flow.
The working and applications of the FDPF14N30T MOSFET are versatile and varied. This device is used in order to switch higher voltage levels safely and efficiently. Due to its low on-resistance, this device is ideal for PWM operations, battery-operated devices and high current application, as well as other power switching and DC motor control applications.
The FDPF14N30T is quickly becoming a popular choice for designers who are looking to integrate a high power device in their circuit designs. This device is known for its superior performance and reliability and it is cost effective, which is an excellent feature for any modern design, both large and small.
The specific data is subject to PDF, and the above content is for reference
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