FDPF15N65YDTU Allicdata Electronics
Allicdata Part #:

FDPF15N65YDTU-ND

Manufacturer Part#:

FDPF15N65YDTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 650V 15A TO-220F
More Detail: N-Channel 650V 15A (Tc) 38.5W (Tc) Through Hole TO...
DataSheet: FDPF15N65YDTU datasheetFDPF15N65YDTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack, Formed Leads
Supplier Device Package: TO-220F-3 (Y-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3095pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FDPF15N65YDTU is a type of Transistor from Fairchild Semiconductor. It is a Field Effect Transistor (FET) that belongs to the Single type MOSFETs family. This application field is mostly utilized in Power-switching applications due to its features such as high switching speeds, high current rating and fast turn-off times. This FET can support a drain-source breakdown voltage of up to 650V.

FDPF15N65YDTU is designed to provide high node capacitance and a low on-resistance, making it suitable for operating from high voltage supplies. It has a very low input capacitance of 30pF, enabling it to respond quickly to signal transitions. Furthermore, it has low input leakage current, high output current, and low drain-source resistance, making it suitable for high switching speeds and reliable power handling.

The FDPF15N65YDTU works by creating an electric field within a MOS transistor channel. A channel is created when electrons or holes from the source are attracted to the gate and form a static field. This static electric field is then responsible for controlling the flow of current between the drain and the source terminals. This means that the stronger the electric field, the higher the current flow. The current flow can be controlled by adjusting the voltage applied to the gate terminal.

The FDPF15N65YDTU is also very efficient at managing the flow of power due to its high current rating. It is able to achieve a continuous drain current of up to 22.5A, and a pulsed current of up to 75A. It also features an extended ambient temperature which makes it suitable for a wide range of applications, from low-power switching to high-power applications. Furthermore, it supports over-temperature protection and temperature compensation, making it safer and more reliable than other types of FETs.

The FDPF15N65YDTU is also known for its fast turn-off time. It has a high reverse recovery time of only 10ns, which means that it can quickly switch off power, reducing circuit stress and achieving increased power savings. It also supports free-wheeling diodes, which help to prevent overshoot and surge conditions, improving the reliability of the power-switching circuit.

In summary, the FDPF15N65YDTU is an ideal discrete FET solution for applications that require high current ratings and fast switching speeds. Its features, such as high node capacitance, low input capacitance, high drain current, low resistance, and fast turn-off times make it a reliable choice for power-switching applications. Moreover, its extended ambient temperature, temperature compensation, and over-temperature protection make it a safe and reliable choice for various types of applications.

The specific data is subject to PDF, and the above content is for reference

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